Other Function Transistors

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
JANTX2N3019A	Microsemi
MMSTA06	Diodes Incorporated	NPN	SINGLE	YES	10 MHz	.2 W	.5 A		1		Other Transistors			100	150 Cel	Tin/Lead (Sn/Pb)			e0
MTD5P06V1	Motorola	P-CHANNEL	SINGLE	YES		40 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			175 Cel	Tin/Lead (Sn/Pb)	5 A		e0
PBSS4350Z/A2,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	2 W	3 A		1		Other Transistors			100	150 Cel
PBSS4350Z/DG,135	NXP Semiconductors	NPN	SINGLE	YES	100 MHz	2 W	3 A		1		Other Transistors			100	150 Cel
PBSS5160PAP,115	NXP Semiconductors	PNP		YES	65 MHz	2 W	1 A				Other Transistors			70	150 Cel	TIN		1	e3	30	260
PBSS5330PA,115	NXP Semiconductors	PNP	SINGLE	YES	100 MHz	2.1 W	3 A		1		Other Transistors			175	150 Cel	TIN		1	e3	30	260
RFP50N06-F102	Fairchild Semiconductor
SI4431DY	Vishay Intertechnology	P-CHANNEL	SINGLE	YES		2.5 W		ENHANCEMENT MODE	1	5.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	Tin/Lead (Sn/Pb)	5.8 A		e0
SI4463BDY-E3	Vishay Intertechnology	P-CHANNEL	SINGLE	YES		3 W		ENHANCEMENT MODE	1	9.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	Matte Tin (Sn)	9.8 A	1	e3
SI4542DY-E3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL		YES		2 W				6.9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	Matte Tin (Sn)	6.9 A	1	e3
2N5963	National Semiconductor	NPN	SINGLE	NO	150 MHz	.625 W	.05 A		1		Other Transistors			1200	150 Cel	Tin/Lead (Sn/Pb)			e0
CXTA44TRPBFREE	Central Semiconductor	NPN	SINGLE	YES	20 MHz	1.2 W	.3 A		1		Other Transistors			50	175 Cel
PHE13003A,412	NXP Semiconductors	NPN	SINGLE	NO		2.1 W	1 A		1		Other Transistors			5	150 Cel	TIN			e3	30	260
BC238	Texas Instruments	NPN	SINGLE	NO	150 MHz	.35 W	.1 A		1		Other Transistors			120	150 Cel
UA726HC	Fairchild Semiconductor	NPN		NO			.005 A				Other Transistors					Tin/Lead (Sn/Pb)			e0
2SC5949O(Q)	Toshiba	NPN	SINGLE	NO		220 W	15 A		1		Other Transistors			80	150 Cel
BUX98A	Texas Instruments	NPN	SINGLE	NO		250 W	30 A		1		Other Transistors				200 Cel
PMN27XPE,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		8.33 W		ENHANCEMENT MODE	1	4.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	4.4 A	1	e3	30	260
SSM6J214FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		3.6 A
SST4393-T1	Vishay Intertechnology	N-CHANNEL		YES		.35 W					Other Transistors	JUNCTION			150 Cel
2N5338	Texas Instruments	NPN	SINGLE	NO	30 MHz	6 W	5 A		1		Other Transistors			30	175 Cel
152-20	Semitronics	NPN	SINGLE	NO	.5 MHz	100 W	6 A		1		Other Transistors			18	140 Cel
2N2955	Unisonic Technologies	PNP	SINGLE	NO	2.5 MHz	115 W	15 A		1		Other Transistors			5	200 Cel
2N709	Texas Instruments	NPN	SINGLE	NO	600 MHz	.3 W			1		Other Transistors			20	200 Cel
MJ4247	Motorola	NPN	SINGLE	NO	20 MHz	90 W	8 A		1		Other Transistors			20	150 Cel	Tin/Lead (Sn/Pb)			e0
2N5070	Texas Instruments	NPN	SINGLE	NO	100 MHz	70 W	3.3 A		1		Other Transistors			10	175 Cel
2SA2121O(Q)	Toshiba	PNP	SINGLE	NO		220 W	15 A		1		Other Transistors			80	150 Cel
2SC3324-BL(TE85L,F)	Toshiba	NPN	SINGLE	YES		.15 W	.1 A		1		Other Transistors			350	125 Cel
2SC5198O(Q)	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors			80	150 Cel					30	260
3SK121	Toshiba	N-CHANNEL								.05 A	Other Transistors	METAL SEMICONDUCTOR	.2 W			Tin/Lead (Sn/Pb)	.05 A		e0
BCY87	Texas Instruments	NPN	SINGLE	NO	10 MHz	.15 W	.03 A		1		Other Transistors			100	175 Cel
BF247A	Texas Instruments	N-CHANNEL		NO		.3 W					Other Transistors	JUNCTION			150 Cel
MJ411	Motorola	NPN	SINGLE	NO	2.5 MHz	100 W	5 A		1		Other Transistors			30	150 Cel	Tin/Lead (Sn/Pb)			e0
MJ480	Texas Instruments	NPN	SINGLE	NO	4 MHz	5 W	4 A		1		Other Transistors			30	175 Cel
MPS-U51	Motorola	PNP	SINGLE	NO	50 MHz	1 W	2 A		1		Other Transistors			50	150 Cel	Tin/Lead (Sn/Pb)			e0
MRF455	TE Connectivity	NPN	SINGLE			175 W	15 A		1		Other Transistors			10	150 Cel
SSM6L14FE(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.15 W		ENHANCEMENT MODE		.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		.8 A			30	260
TTA1943(Q)	Toshiba	PNP	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
2N176	Semitronics	PNP	SINGLE	NO	.004 MHz	90 W	.003 A		1		Other Transistors			25	100 Cel	Tin/Lead (Sn/Pb)			e0
CA3045FX	Harris Semiconductor			NO			.05 A				Other Transistors			40	125 Cel	Tin/Lead (Sn/Pb)			e0
MC3356P	Onsemi
MD8003	Motorola	NPN		NO			.03 A				Other Transistors			100		Tin/Lead (Sn/Pb)			e0
MPS-U10	Motorola	NPN	SINGLE	NO	45 MHz	1 W	.5 A		1		Other Transistors			25	150 Cel	Tin/Lead (Sn/Pb)			e0
MPS-U95	Motorola	PNP	DARLINGTON	NO		1 W	2 A				Other Transistors			25000	150 Cel	Tin/Lead (Sn/Pb)			e0
PMDPB58UPE,115	NXP Semiconductors	P-CHANNEL		YES		8.33 W		ENHANCEMENT MODE		3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	3.6 A	1	e3	30	260
PMN48XP,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		1.28 W		ENHANCEMENT MODE	1	4.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	4.1 A	1	e3	30	260
PMPB27EP,115	NXP Semiconductors	P-CHANNEL	SINGLE	YES		1.7 W		ENHANCEMENT MODE	1	8.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	8.8 A	1	e3	30	260

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.