50 A Power Bipolar Junction Transistors (BJT) 74

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

SGS50DB040D

STMicroelectronics

375 W

50 A

3 V

1

700 ns

BIP General Purpose Power

10

150 Cel

BUV298V

STMicroelectronics

NPN

SINGLE

NO

250 W

50 A

PLASTIC/EPOXY

SWITCHING

1.2 V

UNSPECIFIED

RECTANGULAR

1

400 ns

4

FLANGE MOUNT

BIP General Purpose Powers

250 W

150 Cel

SILICON

450 V

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUF298V

STMicroelectronics

250 W

50 A

2 V

1

400 ns

BIP General Purpose Power

150 Cel

BUV298AF

STMicroelectronics

250 W

50 A

2 V

1

400 ns

BIP General Purpose Power

150 Cel

BUF298AV

STMicroelectronics

250 W

50 A

2 V

1

400 ns

BIP General Purpose Power

150 Cel

STE50DE100

STMicroelectronics

NPN

SINGLE WITH BUILT-IN FET AND DIODE

NO

400 W

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

1

4

FLANGE MOUNT

Other Transistors

3

150 Cel

SILICON

NICKEL

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

SGS50DA080D

STMicroelectronics

400 W

50 A

3 V

1

800 ns

BIP General Purpose Power

20

150 Cel

BUV19

STMicroelectronics

NPN

SINGLE

NO

8 MHz

250 W

50 A

METAL

SWITCHING

1.2 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

250 W

20

200 Cel

SILICON

80 V

1300 ns

1350 ns

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-3

e0

MG50Q2YK9

Toshiba

NPN

COMPLEX

50 A

2

SILICON

1200 V

ISOLATED

Not Qualified

MG30G1JL1

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

50 A

1

SILICON

450 V

ISOLATED

Not Qualified

MG50N2YK1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

100

SILICON

900 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

MG50M2CK2

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

5

FLANGE MOUNT

100

SILICON

880 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

MG50G2YL1

Toshiba

300 W

50 A

1000 ns

2 V

1

2000 ns

BIP General Purpose Power

100

150 Cel

MG50G1JL1

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

50 A

1

SILICON

450 V

ISOLATED

Not Qualified

MG50N2CK1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

5

FLANGE MOUNT

100

SILICON

900 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

MG50J6EL1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

6

11

FLANGE MOUNT

80

SILICON

600 V

UPPER

R-PUFM-X11

ISOLATED

Not Qualified

MG50G2CL3

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

5

FLANGE MOUNT

100

SILICON

450 V

UPPER

R-PUFM-X5

ISOLATED

Not Qualified

MG50M2YK9

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

100

SILICON

880 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

MG50G2DL1

Toshiba

NPN

2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

6

FLANGE MOUNT

100

SILICON

450 V

UPPER

R-PUFM-X6

ISOLATED

Not Qualified

MG50G6EL9

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

6

11

FLANGE MOUNT

100

SILICON

450 V

UPPER

R-PUFM-X11

ISOLATED

Not Qualified

MG50M2YK1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

100

SILICON

880 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

MG50Q2YK1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

100

SILICON

900 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

MG50M1BK1

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

1

3

FLANGE MOUNT

100

SILICON

880 V

UPPER

R-PUFM-X3

ISOLATED

Not Qualified

MG50G2YL1A

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

UNSPECIFIED

RECTANGULAR

2

7

FLANGE MOUNT

100

SILICON

450 V

UPPER

R-PUFM-X7

ISOLATED

Not Qualified

TD62064APG

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

4

16

IN-LINE

SILICON

50 V

DUAL

R-PDIP-T16

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

TD62074APG

Toshiba

NPN

COMPLEX

NO

50 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

4

16

IN-LINE

SILICON

50 V

DUAL

R-PDIP-T16

Not Qualified

LOGIC LEVEL COMPATIBLE

NOT SPECIFIED

NOT SPECIFIED

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.