Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba |
NPN |
DARLINGTON WITH BUILT-IN RESISTOR |
NO |
25 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
25 W |
200 |
150 Cel |
SILICON |
250 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e0 |
|||||||||||||||||||||
|
STMicroelectronics |
NPN |
SINGLE |
NO |
30 MHz |
150 W |
15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
35 |
150 Cel |
SILICON |
230 V |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-264AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
130 MHz |
1.35 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
1.5 W |
40 |
150 Cel |
SILICON |
45 V |
TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
150 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
.5 V |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
25 |
150 Cel |
25 pF |
SILICON |
45 V |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IATF 16949 |
|||||||||||||||
|
Nexperia |
NPN |
SINGLE |
YES |
155 MHz |
1.8 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
.5 V |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
63 |
150 Cel |
4.5 pF |
SILICON |
80 V |
-55 Cel |
DUAL |
R-PDSO-G4 |
COLLECTOR |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE |
YES |
100 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
.5 V |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
63 |
150 Cel |
SILICON |
80 V |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
TR, 7 INCH; 1000 |
AEC-Q101 |
|||||||||||||||||||||
|
Infineon Technologies |
PNP |
SINGLE |
YES |
125 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
45 V |
TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
150 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
.5 V |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
25 |
150 Cel |
25 pF |
SILICON |
60 V |
-55 Cel |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101; IATF 16949 |
||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
150 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
.5 V |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
25 pF |
SILICON |
60 V |
-55 Cel |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
150 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
.5 V |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
63 |
150 Cel |
25 pF |
SILICON |
45 V |
-55 Cel |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
3 MHz |
25 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
25 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-126 |
e3 |
|||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
3 MHz |
25 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
25 |
150 Cel |
SILICON |
80 V |
Tin (Sn) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-126 |
e3 |
|||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
3 MHz |
36 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
50 |
150 Cel |
SILICON |
32 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-225AA |
e3 |
|||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
3 MHz |
36 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
25 |
150 Cel |
SILICON |
60 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-126 |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
50 MHz |
15 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
5 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-225 |
e3 |
|||||||||||||||||||||
|
Fairchild Semiconductor |
PNP |
DARLINGTON |
NO |
3 MHz |
70 W |
10 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
750 |
150 Cel |
SILICON |
80 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
STMicroelectronics |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
25 W |
8 A |
PLASTIC/EPOXY |
SWITCHING |
2 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
29 W |
750 |
150 Cel |
SILICON |
80 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||
|
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
4 MHz |
60 W |
8 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
750 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LEADFORM OPTIONS ARE AVAILABLE |
TO-220AB |
e3 |
|||||||||||||||||||
|
Fairchild Semiconductor |
NPN |
DARLINGTON WITH BUILT-IN DIODE |
NO |
20 MHz |
60 W |
8 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
750 |
150 Cel |
SILICON |
80 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
STMicroelectronics |
NPN |
SINGLE |
NO |
40 MHz |
1.2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
1.5 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
25 W |
30 |
150 Cel |
50 pF |
SILICON |
200 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-126 |
e0 |
||||||||||||||||||
Intersil |
PNP |
DARLINGTON |
NO |
50 W |
10 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
1000 |
150 Cel |
SILICON |
80 V |
-55 Cel |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e0 |
||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
300 MHz |
1.2 W |
.6 A |
PLASTIC/EPOXY |
SWITCHING |
25 ns |
1 V |
FLAT |
RECTANGULAR |
1 |
60 ns |
3 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
8 pF |
SILICON |
40 V |
35 ns |
-55 Cel |
285 ns |
MATTE TIN |
SINGLE |
R-PSSO-F3 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
30 MHz |
150 W |
17 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
80 |
150 Cel |
SILICON |
250 V |
-50 Cel |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-264AA |
e3 |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE WITH BUILT-IN FET AND DIODE |
NO |
28.4 MHz |
120 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
8 |
125 Cel |
SILICON |
800 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
4 MHz |
50 W |
12 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
8 |
150 Cel |
SILICON |
400 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
ISOLATED |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
50 MHz |
2 W |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
400 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
140 MHz |
2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
25 |
SILICON |
100 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
100 MHz |
2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
150 |
150 Cel |
SILICON |
15 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Ik Semicon |
NPN |
COMPLEX |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
7 |
16 |
IN-LINE |
SILICON |
50 V |
-40 Cel |
DUAL |
R-PDIP-T16 |
|||||||||||||||||||||||||||||||
Microchip Technology |
NPN |
SINGLE |
NO |
40 MHz |
200 W |
10 A |
METAL |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
Other Transistors |
30 |
200 Cel |
SILICON |
150 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Qualified |
TO-204 |
e0 |
MIL-19500/509 |
|||||||||||||||||||||
|
Fairchild Semiconductor |
NPN |
SINGLE |
NO |
40 W |
7 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
40 |
150 Cel |
SILICON |
400 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE WITH BUILT-IN DIODE |
YES |
11 MHz |
50 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
6 |
150 Cel |
SILICON |
450 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
Not Qualified |
TO-252 |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
NPN |
SINGLE WITH BUILT-IN DIODE |
NO |
11 MHz |
3 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
20 |
150 Cel |
SILICON |
800 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
3 MHz |
30 W |
3 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
100 |
150 Cel |
SILICON |
60 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Onsemi |
NPN |
COMPLEX |
YES |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
7 |
16 |
SMALL OUTLINE |
1000 |
85 Cel |
SILICON |
50 V |
-20 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
235 |
||||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
2 MHz |
200 W |
30 A |
METAL |
AMPLIFIER |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
Other Transistors |
25 |
200 Cel |
SILICON |
90 V |
MATTE TIN |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-3 |
e3 |
||||||||||||||||||||
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
25 MHz |
20 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Other Transistors |
200 |
150 Cel |
SILICON |
100 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
Onsemi |
PNP |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
25 MHz |
20 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
IN-LINE |
Other Transistors |
200 |
150 Cel |
SILICON |
100 V |
TIN LEAD |
SINGLE |
R-PSIP-T3 |
1 |
COLLECTOR |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
|
Central Semiconductor |
NPN |
SINGLE |
NO |
4 MHz |
75 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
700 ns |
1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
900 ns |
3 |
FLANGE MOUNT |
2 W |
8 |
150 Cel |
130 pF |
SILICON |
400 V |
800 ns |
-65 Cel |
4900 ns |
MATTE TIN OVER NICKEL |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
TO-220AB |
e3 |
||||||||||||||
Onsemi |
NPN |
SINGLE |
NO |
30 MHz |
50 W |
8 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
10 |
150 Cel |
SILICON |
250 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
30 |
235 |
|||||||||||||||||||
|
Onsemi |
PNP |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
3 MHz |
150 W |
15 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
100 |
150 Cel |
SILICON |
200 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||
|
Onsemi |
PNP |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
4 MHz |
160 W |
20 A |
PLASTIC/EPOXY |
AMPLIFIER |
3 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
100 |
150 Cel |
600 pF |
SILICON |
100 V |
-65 Cel |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||
Onsemi |
NPN |
SINGLE |
NO |
35 MHz |
230 W |
15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
10 |
150 Cel |
SILICON |
350 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-264AA |
e0 |
235 |
|||||||||||||||||||||
|
Central Semiconductor |
NPN |
SEPARATE, 4 ELEMENTS |
NO |
200 MHz |
3 W |
PLASTIC/EPOXY |
SWITCHING |
.3 V |
THROUGH-HOLE |
RECTANGULAR |
4 |
14 |
IN-LINE |
40 |
8 pF |
SILICON |
40 V |
MATTE TIN OVER NICKEL |
DUAL |
R-PDIP-T14 |
TO-116 |
e3 |
|||||||||||||||||||||||
Onsemi |
PNP |
SINGLE WITH BUILT-IN DIODE |
NO |
30 MHz |
200 W |
15 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
5 |
FLANGE MOUNT |
Other Transistors |
45 |
150 Cel |
SILICON |
260 V |
TIN LEAD |
SINGLE |
R-PSFM-T5 |
Not Qualified |
HIGH RELIABILITY |
TO-264 |
e0 |
235 |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
85 MHz |
8 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
40 |
SILICON |
80 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
215 MHz |
2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
100 |
150 Cel |
SILICON |
40 V |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G4 |
1 |
Not Qualified |
TO-261 |
e3 |
30 |
260 |
||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
YES |
130 MHz |
1.35 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
300 |
150 Cel |
SILICON |
40 V |
TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.
The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.
Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.