Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Gate-Emitter Voltage | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Onsemi |
PNP |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
10 MHz |
40 W |
4 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
750 |
150 Cel |
SILICON |
80 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-225AA |
e0 |
30 |
235 |
||||||||||||||||||||
|
Onsemi |
PNP |
DARLINGTON WITH BUILT-IN RESISTOR |
NO |
.1 MHz |
125 W |
10 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
1000 |
150 Cel |
SILICON |
100 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-247 |
e3 |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
100 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
10 |
150 Cel |
SILICON |
450 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
30 MHz |
.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
50 |
150 Cel |
SILICON |
300 V |
-55 Cel |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
20 A |
METAL |
SWITCHING |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
40 |
SILICON |
350 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AA |
e0 |
|||||||||||||||||||||||||
STMicroelectronics |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
10 MHz |
175 W |
20 A |
METAL |
SWITCHING |
3 V |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
Other Transistors |
175 W |
40 |
200 Cel |
SILICON |
450 V |
800 ns |
2000 ns |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
MULTIEPITAXIAL PLANAR |
TO-3 |
e0 |
||||||||||||||||
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
10 MHz |
150 W |
10 A |
METAL |
SWITCHING |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
Other Transistors |
30 |
200 Cel |
SILICON |
400 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Not Qualified |
TO-204AA |
e0 |
30 |
235 |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
40 MHz |
12.5 W |
4 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
15 |
150 Cel |
SILICON |
100 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Onsemi |
NPN |
SINGLE |
NO |
14 MHz |
80 W |
8 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
5 |
150 Cel |
SILICON |
400 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e0 |
30 |
235 |
|||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
2 MHz |
75 W |
10 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
5 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
Fairchild Semiconductor |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
SILICON |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
YES |
40 MHz |
50 W |
10 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
80 V |
-55 Cel |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Vishay Intertechnology |
|||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
3 MHz |
65 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
15 |
150 Cel |
SILICON |
40 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Diodes Incorporated |
PNP |
SINGLE |
YES |
120 MHz |
3 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
45 |
150 Cel |
SILICON |
140 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
TO-261AA |
e3 |
260 |
||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
5 MHz |
30 W |
15 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
5 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
LEADFORM OPTIONS ARE AVAILABLE |
TO-220AB |
e3 |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
3.5 W |
3 A |
1 |
Other Transistors |
200 |
150 Cel |
Tin/Bismuth (Sn/Bi) |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE |
YES |
100 MHz |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
FLAT |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
100 |
150 Cel |
SILICON |
60 V |
SINGLE |
R-PSSO-F3 |
COLLECTOR |
NOT SPECIFIED |
NOT SPECIFIED |
AEC-Q101 |
|||||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
3 MHz |
65 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
15 |
150 Cel |
SILICON |
80 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
40 W |
4 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
750 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-225AA |
e3 |
||||||||||||||||||||||
NXP Semiconductors |
NPN |
SINGLE |
NO |
45 W |
10 A |
PLASTIC/EPOXY |
SWITCHING |
1 V |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
45 W |
4.5 |
150 Cel |
SILICON |
825 V |
3750 ns |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
140 MHz |
2.5 W |
4.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
75 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
175 MHz |
2 W |
3 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
40 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
YES |
33 W |
3 A |
1 |
Other Transistors |
120 |
150 Cel |
MATTE TIN |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||
Hbcontrols |
1380 W |
300 A |
2000 ns |
2 V |
1 |
3000 ns |
BIP General Purpose Power |
75 |
150 Cel |
|||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
NPN |
SINGLE |
YES |
1.6 W |
1.5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
4 |
150 Cel |
SILICON |
400 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
STMicroelectronics |
PNP |
SINGLE |
YES |
130 MHz |
1.6 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
Other Transistors |
10 |
150 Cel |
SILICON |
60 V |
MATTE TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
Not Qualified |
e3 |
||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
3 MHz |
65 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
15 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Onsemi |
PNP |
SINGLE |
NO |
3 MHz |
65 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
15 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
NO |
80 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
15 |
SILICON |
300 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||||
|
STMicroelectronics |
NPN |
SINGLE |
NO |
20 MHz |
100 W |
10 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
50 |
150 Cel |
SILICON |
140 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Infineon Technologies |
NPN |
SINGLE |
YES |
100 MHz |
2 W |
1 A |
PLASTIC/EPOXY |
AMPLIFIER |
.5 V |
GULL WING |
RECTANGULAR |
1 |
4 |
SMALL OUTLINE |
100 |
150 Cel |
SILICON |
45 V |
TIN |
DUAL |
R-PDSO-G4 |
1 |
COLLECTOR |
TR, 7 INCH; 1000 |
e3 |
AEC-Q101 |
|||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
NO |
32 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
14 |
150 Cel |
SILICON |
450 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
NO |
32 W |
5 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
14 |
150 Cel |
SILICON |
450 V |
MATTE TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||||
|
NXP Semiconductors |
NPN |
SINGLE |
NO |
32 W |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
20 |
150 Cel |
SILICON |
550 V |
TIN |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
e3 |
||||||||||||||||||||||
Microchip Technology |
PNP |
DARLINGTON WITH BUILT-IN RESISTOR |
NO |
12 A |
METAL |
AMPLIFIER |
PIN/PEG |
ROUND |
1 |
2 |
FLANGE MOUNT |
150 |
175 Cel |
SILICON |
100 V |
TIN LEAD |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
Qualified |
TO-3 |
e0 |
MIL-19500/501C |
|||||||||||||||||||||||
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
YES |
25 MHz |
20 W |
2 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
200 |
150 Cel |
SILICON |
100 V |
TIN LEAD |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
|
Comchip Technology |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
YES |
65 MHz |
13 W |
5 A |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
10 |
150 Cel |
SILICON |
25 V |
MATTE TIN |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Onsemi |
NPN |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
NO |
3 MHz |
150 W |
15 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
100 |
150 Cel |
SILICON |
200 V |
Tin/Lead (Sn/Pb) |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-218 |
e0 |
30 |
235 |
|||||||||||||||||||
|
Onsemi |
NPN |
SINGLE |
NO |
3 MHz |
30 W |
1 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
15 |
150 Cel |
SILICON |
80 V |
TIN |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
80 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
15 |
SILICON |
300 V |
MATTE TIN |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
Diodes Incorporated |
NPN |
SINGLE |
NO |
80 MHz |
3 A |
PLASTIC/EPOXY |
SWITCHING |
WIRE |
RECTANGULAR |
1 |
3 |
IN-LINE |
15 |
SILICON |
300 V |
Matte Tin (Sn) |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||
|
Diodes Incorporated |
NPN |
SINGLE |
YES |
190 MHz |
1.81 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
30 |
150 Cel |
SILICON |
40 V |
MATTE TIN |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
260 |
||||||||||||||||||||
|
Central Semiconductor |
NPN |
SINGLE |
NO |
4 MHz |
150 W |
10 A |
METAL |
SWITCHING |
400 ns |
.8 V |
PIN/PEG |
ROUND |
1 |
400 ns |
2 |
FLANGE MOUNT |
30 |
200 Cel |
SILICON |
80 V |
-65 Cel |
700 ns |
MATTE TIN OVER NICKEL |
BOTTOM |
O-MBFM-P2 |
COLLECTOR |
TO-3 |
e3 |
|||||||||||||||||
Motorola |
PNP |
SINGLE |
NO |
3 MHz |
6 A |
PLASTIC/EPOXY |
SWITCHING |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
65 W |
15 |
SILICON |
80 V |
SINGLE |
R-PSFM-T3 |
COLLECTOR |
Not Qualified |
TO-220AB |
|||||||||||||||||||||||||
|
STMicroelectronics |
NPN |
SINGLE |
YES |
45 W |
4 A |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
1 |
2 |
SMALL OUTLINE |
Other Transistors |
25 |
150 Cel |
SILICON |
400 V |
Matte Tin (Sn) - annealed |
SINGLE |
R-PSSO-G2 |
1 |
COLLECTOR |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
Fairchild Semiconductor |
NPN |
SINGLE |
NO |
150 MHz |
7 W |
.1 A |
PLASTIC/EPOXY |
AMPLIFIER |
THROUGH-HOLE |
RECTANGULAR |
1 |
3 |
FLANGE MOUNT |
Other Transistors |
60 |
150 Cel |
SILICON |
300 V |
TIN LEAD |
SINGLE |
R-PSFM-T3 |
ISOLATED |
Not Qualified |
TO-126 |
e0 |
Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.
The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.
Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.
Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.