Power Bipolar Junction Transistors (BJT)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BD680

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e0

30

235

BDV64BG

Onsemi

PNP

DARLINGTON WITH BUILT-IN RESISTOR

NO

.1 MHz

125 W

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

BUT11ATU

Onsemi

NPN

SINGLE

NO

100 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

450 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

FZT657TA

Diodes Incorporated

NPN

SINGLE

YES

30 MHz

.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

50

150 Cel

SILICON

300 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

MJ10000

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

40

SILICON

350 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

MJ10004

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

175 W

20 A

METAL

SWITCHING

3 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

175 W

40

200 Cel

SILICON

450 V

800 ns

2000 ns

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

MULTIEPITAXIAL PLANAR

TO-3

e0

MJ10007

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

150 W

10 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

30

235

MJD243T4G

Onsemi

NPN

SINGLE

YES

40 MHz

12.5 W

4 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

15

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

MJE13007

Onsemi

NPN

SINGLE

NO

14 MHz

80 W

8 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

400 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

30

235

MJE2955TTU

Onsemi

PNP

SINGLE

NO

2 MHz

75 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

MJE2955TTU_NL

Fairchild Semiconductor

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

SILICON

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NJVMJB45H11T4G

Onsemi

PNP

SINGLE

YES

40 MHz

50 W

10 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

80 V

-55 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101

SQS160ELNW

Vishay Intertechnology

TIP42G

Onsemi

PNP

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

40 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

ZXTP2014GTA

Diodes Incorporated

PNP

SINGLE

YES

120 MHz

3 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

45

150 Cel

SILICON

140 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

TO-261AA

e3

260

2N6488G

Onsemi

NPN

SINGLE

NO

5 MHz

30 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

2SC5964-TD-E

Onsemi

NPN

SINGLE

YES

3.5 W

3 A

1

Other Transistors

200

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

30

260

BCX5516H6433XTMA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

1 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

3

SMALL OUTLINE

100

150 Cel

SILICON

60 V

SINGLE

R-PSSO-F3

COLLECTOR

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BD244BTU

Onsemi

PNP

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BD677G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e3

BU2722AF

NXP Semiconductors

NPN

SINGLE

NO

45 W

10 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

45 W

4.5

150 Cel

SILICON

825 V

3750 ns

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

FZT1053ATA

Diodes Incorporated

NPN

SINGLE

YES

140 MHz

2.5 W

4.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

75 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

FZT651

Diodes Incorporated

NPN

SINGLE

YES

175 MHz

2 W

3 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

40

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

30

260

NSV1C300ET4G

Onsemi

PNP

SINGLE

YES

33 W

3 A

1

Other Transistors

120

150 Cel

MATTE TIN

1

e3

30

260

SQD300A60

Hbcontrols

1380 W

300 A

2000 ns

2 V

1

3000 ns

BIP General Purpose Power

75

150 Cel

STN83003

STMicroelectronics

NPN

SINGLE

YES

1.6 W

1.5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

4

150 Cel

SILICON

400 V

MATTE TIN

DUAL

R-PDSO-G4

COLLECTOR

Not Qualified

e3

30

260

STN951

STMicroelectronics

PNP

SINGLE

YES

130 MHz

1.6 W

5 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

60 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

e3

TIP41BG

Onsemi

NPN

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

TIP42BG

Onsemi

PNP

SINGLE

NO

3 MHz

65 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

ZTX857STZ

Diodes Incorporated

NPN

SINGLE

NO

80 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

300 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

2STC4468

STMicroelectronics

NPN

SINGLE

NO

20 MHz

100 W

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

50

150 Cel

SILICON

140 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

e3

30

260

BCP5416H6327XTSA1

Infineon Technologies

NPN

SINGLE

YES

100 MHz

2 W

1 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

100

150 Cel

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

TR, 7 INCH; 1000

e3

AEC-Q101

BUT11APX

NXP Semiconductors

NPN

SINGLE

NO

32 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

14

150 Cel

SILICON

450 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

BUT11APX,127

NXP Semiconductors

NPN

SINGLE

NO

32 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

14

150 Cel

SILICON

450 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

BUT11APX-1200,127

NXP Semiconductors

NPN

SINGLE

NO

32 W

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

20

150 Cel

SILICON

550 V

TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

JAN2N6052

Microchip Technology

PNP

DARLINGTON WITH BUILT-IN RESISTOR

NO

12 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

2

FLANGE MOUNT

150

175 Cel

SILICON

100 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Qualified

TO-3

e0

MIL-19500/501C

MJD112

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

25 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

235

MJD117-HF

Comchip Technology

NOT SPECIFIED

NOT SPECIFIED

MJD200G

Onsemi

NPN

SINGLE

YES

65 MHz

13 W

5 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

10

150 Cel

SILICON

25 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

MJH11020

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

200 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e0

30

235

TIP29BG

Onsemi

NPN

SINGLE

NO

3 MHz

30 W

1 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

15

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

ZTX857STOA

Diodes Incorporated

NPN

SINGLE

NO

80 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

300 V

MATTE TIN

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZTX857STOB

Diodes Incorporated

NPN

SINGLE

NO

80 MHz

3 A

PLASTIC/EPOXY

SWITCHING

WIRE

RECTANGULAR

1

3

IN-LINE

15

SILICON

300 V

Matte Tin (Sn)

SINGLE

R-PSIP-W3

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

ZXTN25040DFHTA

Diodes Incorporated

NPN

SINGLE

YES

190 MHz

1.81 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

30

150 Cel

SILICON

40 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

2N3716PBFREE

Central Semiconductor

NPN

SINGLE

NO

4 MHz

150 W

10 A

METAL

SWITCHING

400 ns

.8 V

PIN/PEG

ROUND

1

400 ns

2

FLANGE MOUNT

30

200 Cel

SILICON

80 V

-65 Cel

700 ns

MATTE TIN OVER NICKEL

BOTTOM

O-MBFM-P2

COLLECTOR

TO-3

e3

BD244BS

Motorola

PNP

SINGLE

NO

3 MHz

6 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

65 W

15

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

BULD742CT4

STMicroelectronics

NPN

SINGLE

YES

45 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

25

150 Cel

SILICON

400 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

KSC3503D

Fairchild Semiconductor

NPN

SINGLE

NO

150 MHz

7 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

60

150 Cel

SILICON

300 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-126

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.