SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR Power Field Effect Transistors (FET) 4

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
TC6320TG-G	Microchip Technology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2			8	SMALL OUTLINE	Power Field-Effect Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	7 ohm		DUAL	R-PDSO-G8	1		Not Qualified	e3	40	260	30 pF	TS 16949
TC6320K6-G	Microchip Technology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES		PLASTIC/EPOXY	SWITCHING	200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2			8	SMALL OUTLINE	Power Field-Effect Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	25 ns	-55 Cel	35 ns	MATTE TIN	7 ohm		DUAL	R-PDSO-N8		DRAIN	Not Qualified	e3			30 pF	TS 16949
FDSS2407	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.27 W	PLASTIC/EPOXY	SWITCHING	62 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	140 mJ	3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.11 ohm	3.3 A	DUAL	R-PDSO-G8	1		Not Qualified	e3	30	260
FDSS2407-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	YES	2.27 W	PLASTIC/EPOXY	SWITCHING	62 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	140 mJ	3.3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.27 W	150 Cel	SILICON	2700 ns	-55 Cel	18500 ns		.11 ohm	3 A	DUAL	R-PDSO-G8								AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.