
Image shown is a representation only.
Manufacturer | Microchip Technology |
---|---|
Manufacturer's Part Number | TC6320K6-G |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Transistor Element Material: SILICON; |
Datasheet | TC6320K6-G Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 25 ns |
Sub-Category: | Power Field-Effect Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 35 ns |
JESD-30 Code: | R-PDSO-N8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 7 ohm |
Maximum Feedback Capacitance (Crss): | 30 pF |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 200 V |
Qualification: | Not Qualified |
Reference Standard: | TS 16949 |