SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR Power Field Effect Transistors (FET) 11

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

MLD1N06CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

59 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.75 ohm

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

40

260

MLP1N06CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

NO

30 W

PLASTIC/EPOXY

SWITCHING

59 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

2.75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.75 ohm

2.75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

260

MLD2N06CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.4 ohm

2 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e3

40

260

MLD2N06CLT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.4 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e3

40

260

MLP1N06CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

NO

30 W

PLASTIC/EPOXY

SWITCHING

59 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

2.75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.75 ohm

2.75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

235

MLP2N06CLG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

NO

40 W

PLASTIC/EPOXY

SWITCHING

58 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.4 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

e3

260

MLD1N06CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

59 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

80 mJ

2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.75 ohm

1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

NOT SPECIFIED

235

MLD2N06CLT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.4 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e0

NOT SPECIFIED

235

MLD2N06CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

40 W

PLASTIC/EPOXY

SWITCHING

58 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.4 ohm

2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION

e0

NOT SPECIFIED

NOT SPECIFIED

MLP2N06CL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

NO

40 W

PLASTIC/EPOXY

SWITCHING

58 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 mJ

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

2 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTED

TO-220AB

e0

235

TPCP8J01

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR

YES

.1 A

PLASTIC/EPOXY

SWITCHING

32 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

22 A

5.8 mJ

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

80

150 Cel

SILICON

.049 ohm

5.5 A

DUAL

R-PDSO-F8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.