Onsemi - MLD2N06CLT4

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MLD2N06CLT4 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number MLD2N06CLT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Terminal Position: SINGLE; Case Connection: DRAIN;
Datasheet MLD2N06CLT4 Datasheet
In Stock2,243
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 2
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 80 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e0
Minimum DS Breakdown Voltage: 58 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION
Peak Reflow Temperature (C): 235
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