.3 W Power Field Effect Transistors (FET) 42

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NDS7002A_NB9GGTXA

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

2 ohm

.28 A

DUAL

R-PDSO-G3

TO-236AB

5 pF

NX3008NBKT,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

SSM6N7002FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

3SK59

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

MFE131

Motorola

N-CHANNEL

SINGLE

NO

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

C2T206

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T211

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

C2T204

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T212

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

C2T213

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

C2T205

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

2SK544

Onsemi

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

2SK2270

Onsemi

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

BF987

Infineon Technologies

N-CHANNEL

SINGLE

NO

.3 W

DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

SSM6N7002FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

SSM6N7002BFU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

SSM6N48FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6N37FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 A

SSM6K07FU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

SSM6N09FU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 A

30

260

SSM6K07FU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

3SK90

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.02 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

Tin/Lead (Sn/Pb)

.02 A

e0

3SK73

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

SSM6N09FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.4 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.4 A

SSM6K08FU(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

SSM6N15AFU(TE85L,F)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6N15AFU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

SSM6N48FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

3SK77

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

SSM6N7002BFU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

3SK78

Toshiba

N-CHANNEL

SINGLE

NO

.3 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.03 A

e0

SSM6K08FU(TE85L)

Toshiba

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

SSM6N37FU(TE85L)

Toshiba

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 A

UPA611TA-T2-AT

Renesas Electronics

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SK439

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

2SK439F

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

2SK439E

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

UPA611TA-AT

Renesas Electronics

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

UPA611TA-T2-A

Renesas Electronics

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SK439D

Renesas Electronics

N-CHANNEL

SINGLE

NO

.3 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

UPA611TA-T1-AT

Renesas Electronics

N-CHANNEL

YES

.3 W

ENHANCEMENT MODE

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SK3378

Renesas Electronics

N-CHANNEL

SINGLE

YES

.3 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.