Toshiba - 3SK73

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3SK73 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 3SK73
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .03 A; JESD-609 Code: e0;
Datasheet 3SK73 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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