.5 W Power Field Effect Transistors (FET) 82

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDN5618P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	1.25 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.17 ohm	1.25 A	DUAL	R-PDSO-G3	1	Not Qualified		e3	30	260
FDN5618P_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	1.25 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn)	.17 ohm	1.25 A	DUAL	R-PDSO-G3	1	Not Qualified	ULTRA LOW RESISTANCE	e3
NDS355AN-NB9L007A	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin (Sn)		1.7 A			1			e3	30	260
2N7002PV,115	NXP Semiconductors	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			.35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		-55 Cel	TIN		.35 A			1			e3	30	260
FDN5630-F095	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin (Sn)		1.7 A			1			e3	30	260
NX3008NBKV,115	NXP Semiconductors	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN		.4 A			1			e3	30	260
PMDT290UNEH	Nexperia	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	3.2 A		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	.38 ohm	.8 A	DUAL	R-PDSO-F6	1			e3	30	260	7 pF	AEC-Q101
SD5401CY	Vishay Intertechnology	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			.05 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel					.05 A
BSL214N	Infineon Technologies	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.5 A
BSL207N	Infineon Technologies	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			2.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin (Sn)		2.1 A			1			e3
BSL205N	Infineon Technologies	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin (Sn)		2.5 A			1			e3
BSL806N	Infineon Technologies	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			2.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2.3 A
BSL306N	Infineon Technologies	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			2.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin (Sn)		2.3 A			1			e3
SN7002WE6433	Infineon Technologies	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.23 A
SN7002WE6327	Infineon Technologies	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					.23 A			1					260
DMN100	Diodes Incorporated	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		1.1 A						e0
SSM6K25FE(TPL3,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K25FE(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K208FE(TPL3)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.9 A
SSM6N24TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6N25TU(TE85L)	Toshiba	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K25FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K211FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.2 A
SSM6K405TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM6K204FE(TPL3)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM6K210FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.4 A
SSM6N24TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A							30	260
SSM5H10TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel					1.6 A
SSM6K30FE(TPL3,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.2 A
SSM6K32TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM5H10TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.6 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	125 Cel					1.6 A
SSM6K406TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		4.4 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					4.4 A
SSM6K211FE(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.2 A
SSM6K211FE(TPL3,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					3.2 A
SSM6K208FE(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.9 A
SSM6N40TU(TE85L)	Toshiba	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.6 A
SSM6K208FE(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.9 A
SSM6K204FE(TPL3,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM6K24FE(TPL3)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K204FE(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM6K403TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		4.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4.2 A
SSM6K403TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		4.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					4.2 A
SSM6K404TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					3 A
SSM6K202FE(TPL3)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2.3 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					2.3 A
SSM5H08TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		1.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	100 Cel					1.5 A
SSM6N25TU(TE85L,F)	Toshiba	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			.5 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel					.5 A
SSM6K405TU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	.5 W						ENHANCEMENT MODE	1		2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
SSM6N40TU(TE85L,F)	Toshiba	N-CHANNEL		YES	.5 W						ENHANCEMENT MODE			1.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					1.6 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.