Infineon Technologies - BSL214N

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BSL214N by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL214N
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 1.5 A; Maximum Drain Current (ID): 1.5 A;
Datasheet BSL214N Datasheet
In Stock994
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.5 A
Maximum Drain Current (Abs) (ID): 1.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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