1.2 W Power Field Effect Transistors (FET) 54

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
DMN1019USN-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3	1				e3	30	260	375 pF
SSM3K361RLF(T	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3									AEC-Q101
SSM3K361R,LF(T	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3									AEC-Q101
SSM3K361R,LF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3								22 pF
SSM3K361R,LF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3								22 pF
SSM3K341R,LF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	28.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F3								35 pF
SSM3K341R,LF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	28.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F3								35 pF
DMN1019USN-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	9.3 A	DUAL	R-PDSO-G3	1				e3		260	375 pF
FDS4480	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	240 mJ	10.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.012 ohm	10.8 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
SSM3K361R,LXHF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3								22 pF	AEC-Q101
SI2310-TP	Micro Commercial Components	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.125 ohm	3 A	DUAL	R-PDSO-G3	1				e3	10	260	19.5 pF
SSM3K361R,LXHF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3								22 pF	AEC-Q101
SI2324A-TP	Micro Commercial Components	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1				3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.3 ohm	2 A	DUAL	R-PDSO-G3					e3	10	260	36 pF
SSM3K341R,LXHF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	28.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F3								35 pF	AEC-Q101
SSM3K341R,LXHF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	28.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F3								35 pF	AEC-Q101
FDC642P-F085P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	72 mJ	4 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.2 W	150 Cel	SILICON	23 ns	-55 Cel	53 ns		.065 ohm	4 A	DUAL	R-PDSO-G6	1					30	260		AEC-Q101
FDC642P_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	72 mJ	4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.065 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified		e3	30	260
FDC642P-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	72 mJ	4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.2 W	150 Cel	SILICON	23 ns	-55 Cel	53 ns	MATTE TIN	.065 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified		e3	30	260		AEC-Q101
FDS4470	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	370 mJ	12.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.009 ohm	12.5 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
SSM3J377R,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.093 ohm	3.9 A	DUAL	R-PDSO-F3								32 pF
EMH2401	Onsemi	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3 A
CPH3440	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							7 A
FTS2051	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.5 A
MCH6438	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.2 A
EMH2409TL	Onsemi	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
CPH3441	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6.5 A
CPH3442	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6.5 A
EMH2408	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						DEPLETION MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
FTS2052	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.5 A
EMH2402	Onsemi	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
MCH3478	Onsemi	N-CHANNEL	SINGLE	YES	1.2 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2 A
IRF7757GTRPBF	Infineon Technologies	N-CHANNEL		YES	1.2 W						ENHANCEMENT MODE				4.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.8 A
DMP2109UVTQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.08 ohm	3.1 A	DUAL	R-PDSO-G6								47 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMP2109UVTQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.08 ohm	3.1 A	DUAL	R-PDSO-G6								47 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMN3053L-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	4 A	DUAL	R-PDSO-G3	1				e3	30	260	42 pF
DMP68D1LFB-7B	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	65 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	.8 A			3	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	8 ohm	.215 A	BOTTOM	R-PBCC-N3		DRAIN			e4		260	6 pF
DMN3053L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	4 A	DUAL	R-PDSO-G3	1				e3	30	260	42 pF
DMN2055UQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.038 ohm	4.8 A	DUAL	R-PDSO-G3					e3			37 pF	AEC-Q101; IATF 16949; MIL-STD-202
DMN2055UQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	25 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.038 ohm	4.8 A	DUAL	R-PDSO-G3					e3			37 pF	AEC-Q101; IATF 16949; MIL-STD-202
2SK2228	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.16 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified
2SK2200TP	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.45 ohm	3 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE		NOT SPECIFIED	240
SSM3J377R,LXHF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.093 ohm	3.9 A	DUAL	R-PDSO-F3								32 pF	AEC-Q101
SSM3K341R,LXGF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	24 A	28.9 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.036 ohm	6 A	DUAL	R-PDSO-F3								35 pF	AEC-Q101
2SJ669	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.5 mJ	5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.25 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified
SSM3J377R,LXGF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.093 ohm	3.9 A	DUAL	R-PDSO-F3								32 pF	AEC-Q101
SSM3K361R,LXGF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3								22 pF	AEC-Q101
SSM3J377R,LXHF(B	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	7.8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.093 ohm	3.9 A	DUAL	R-PDSO-F3								32 pF	AEC-Q101
SSM3K361R	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	1.2 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	14 A	9.1 mJ	3.5 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.069 ohm	3.5 A	DUAL	R-PDSO-F3						NOT SPECIFIED	NOT SPECIFIED		AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.