1.25 W Power Field Effect Transistors (FET) 100

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRLML2502TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		4.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	4.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	66 pF
IRLML5203TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified			e3	30	260	43 pF
IRLML0060TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A		2.7 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.092 ohm	2.7 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
NTR4501NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns	-55 Cel	30 ns	MATTE TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260	50 pF
IRLML2502PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		4.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	4.2 A	DUAL	R-PDSO-G3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-236AB	e3	30	260
DMP3056LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A		5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	5 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IRLML2502TR	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		4.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.045 ohm	4.2 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e0	30	245
IRLML5203	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified			e0
IRLML5203PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified	ULTRA LOW RESISTANCE	TO-236AB	e3
IRLML5203GTRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	43 pF
MGSF2N02ELT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236	e3	30	260	45 pF
AO3422L	Alpha & Omega Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		2.1 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel			.16 ohm	2.1 A	DUAL	R-PDSO-G3					TO-236				12.6 pF
TBD62003AFWG(Z,EHZ	Toshiba	N-CHANNEL	COMPLEX	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	DEPLETION MODE	7				16	SMALL OUTLINE		JUNCTION		85 Cel	SILICON		-40 Cel				.5 A	DUAL	R-PDSO-G16
DMP3056LDMQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A		4.3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	5 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260
DMP2066LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.04 ohm	4.6 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
SI2318DS-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3 A								e0
SI2328DS-T1	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			1.15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		1.15 A								e0
DMN3150L-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.054 ohm	3.8 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
SSM6J507NU,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.032 ohm	10 A	DUAL	S-PDSO-N6		DRAIN							185 pF
PJA3404-AU_R1_000A1	Panjit International	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.03 ohm	5.6 A	DUAL	R-PDSO-G3						e3	40	260	34 pF	AEC-Q101; IEC-61249; MIL-STD-750; TS-16949
IRLML5203TR	International Rectifier	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.098 ohm	3 A	DUAL	R-PDSO-G3			Not Qualified			e0	30	245
SI2302DS	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2.8 A								e0
QS5K2TR	ROHM	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8 A		2 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.154 ohm	2 A	DUAL	R-PDSO-G5	1		Not Qualified			e1	10	260
SSM6K513NU,LF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	15 A	DUAL	S-PDSO-N6		DRAIN							52 pF
QS6J11TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.105 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified			e1	10	260
SSM6K341NU,LF	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	24 A	28.9 mJ	6 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.036 ohm	6 A	DUAL	S-PDSO-N6	1	DRAIN						260
DMP2066LSN-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.6 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.04 ohm	4.6 A	DUAL	R-PDSO-G3	1		Not Qualified	HIGH RELIABILITY		e3	30	260
RRQ030P03TR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.075 ohm	3 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
TT8J21TR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.068 ohm	2.5 A	DUAL	R-PDSO-F8	1		Not Qualified			e2	10	260
BSP030,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.03 ohm	10 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
DMP2130LDM-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.4 A	DUAL	R-PDSO-G6	1		Not Qualified	HIGH RELIABILITY		e3	30	260
RRQ045P03HZGTR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.035 ohm	4.5 A	DUAL	R-PDSO-G6							NOT SPECIFIED	NOT SPECIFIED	180 pF	AEC-Q101
RSQ045N03TR	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.056 ohm	4.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
RXQ040N03TCR	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		4 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.07 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
TT8J11TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	3.5 A	DUAL	R-PDSO-F8	1						10	260
RTQ020N03TR	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.194 ohm	2 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
RTQ040P02TR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.055 ohm	4 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
RTQ045N03TR	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.06 ohm	4.5 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
NVR4501NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	37 ns	-55 Cel	30 ns	MATTE TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	50 pF	AEC-Q101
RZQ050P01TR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN SILVER COPPER	.026 ohm	5 A	DUAL	R-PDSO-G6	1		Not Qualified			e1	10	260
TT8J13TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	5 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.062 ohm	2.5 A	DUAL	R-PDSO-F8	1						10	260
NSTR4501NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260		AEC-Q101
MGSF2N02ELT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.085 ohm	2.8 A	DUAL	R-PDSO-G3			Not Qualified		TO-236AB	e0		235
MGSF2N02ELT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3		260
MVSF2N02ELT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	45 pF
MGSF2N02ELT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5 A		2.8 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.085 ohm	2.8 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0		235
NTR4501NT1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn80Pb20)	.08 ohm	3.2 A	DUAL	R-PDSO-G3			Not Qualified		TO-236AB	e0	30	235
NTR4501NT3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e0		235

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.