1.25 W Power Field Effect Transistors (FET) 100

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTR4501NST1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	24.1 ns	-55 Cel	19.5 ns	MATTE TIN	.084 ohm	3.2 A	DUAL	R-PDSO-G3	1				TO-236	e3	30	260	65 pF
NTR4501NT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3.2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.08 ohm	3.2 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260
STC6NF30V	STMicroelectronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.03 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e4
BSP030	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin (Sn)	.03 ohm	10 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
BSP030T/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A			4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	10 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
BSP090	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.09 ohm	5.7 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified
BSP090T/R	NXP Semiconductors	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.09 ohm	5.7 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified
BSK211P	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A	28 mJ	3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.075 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
BSK313P	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12.8 A	28 mJ	3.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.08 ohm	3.2 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
IRF7534D1PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	SQUARE	ENHANCEMENT MODE	1	34 A		4.3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.055 ohm	4.3 A	DUAL	S-PDSO-G8
IRF7524D1PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A		1.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.27 ohm	1.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7526D1PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.2 ohm	2 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7526D1TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES	1.25 W							1			2 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							2 A									NOT SPECIFIED	NOT SPECIFIED
IRLML5203GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel			.098 ohm	3 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB				43 pF
IRF7509TR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		2.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.25 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.135 ohm	2.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3			32 pF
IRF7524D1GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A		1.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.27 ohm	1.7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
IRF7524D1TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES	1.25 W							1			1.7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							1.7 A									NOT SPECIFIED	NOT SPECIFIED
PMV52ENEA	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	3.8 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		TIN	.07 ohm	3.2 A	DUAL	R-PDSO-G3	1			LOGIC LEVEL COMPATIBLE	TO-236AB	e3	30	260	19 pF	AEC-Q101; IEC-60134
PMV52ENE	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.07 ohm	3.2 A	DUAL	R-PDSO-G3				LOGIC LEVEL COMPATIBLE	TO-236AB				19 pF	IEC-60134
AF2302NWL	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.4 A									30	260
AF2302NWLA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							2.4 A									30	260
DMP2066LDMQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.04 ohm	4.6 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3	30	260		AEC-Q101
AF2302NWA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2.4 A								e0
AF2302NW	Diodes Incorporated	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			2.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2.4 A								e0
SSM6K513NU	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	15 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	52 pF
SSM6J511NU,LF	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0192 ohm	14 A	DUAL	S-PDSO-N6		DRAIN							570 pF
SSM6K341NU	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	24 A	28.9 mJ	6 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.036 ohm	6 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SSM6J512NU	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.0401 ohm	10 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	225 pF
SSM6J507NU	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A		10 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.032 ohm	10 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	185 pF
SSM6J511NU	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	40 A		14 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0192 ohm	14 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	570 pF
SSM6K504NU	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.026 ohm	9 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	42 pF	AEC-Q101
SSM6K504NU,LF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	18 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.026 ohm	9 A	DUAL	S-PDSO-N6		DRAIN							42 pF	AEC-Q101
SSM6J507NU,LF(B	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	30 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.032 ohm	10 A	DUAL	S-PDSO-N6		DRAIN							185 pF
SSM6K513NU,LF(B	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	37.6 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.012 ohm	15 A	DUAL	S-PDSO-N6		DRAIN							52 pF
SSM3K01T(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.2 A
SSM3K316T(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
SSM3K315T(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
SSM3K316T(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
SSM3K01T(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			3.2 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.2 A
SSM3K315T(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A
2SK4035-T2B-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.5 A
2SK4035-T2B-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							.5 A
HAT1111C-EL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	8 A		2 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.45 ohm	2 A	DUAL	R-PDSO-F6			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
HAT2217C-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.183 ohm	3 A	DUAL	R-PDSO-F6	1		Not Qualified			e6	20	260
2SK3576-T2B-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
2SK3577-L-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
2SK3576-L-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A
2SK3576-L-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.25 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							4 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.