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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM3K316T(TE85L,F) |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | SSM3K316T(TE85L,F) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
SSM3K316T(TE85LF)DKR SSM3K316T(TE85LF)TR SSM3K316T(T5LFT)TR SSM3K316TTE85LF SSM3K316T(TE85LF)CT SSM3K316T(T5LFT)CT SSM3K316T(T5LFT)DKR SSM3K316T(T5LFT)TR-ND SSM3K316T(T5LFT)DKR-ND SSM3K316T(T5LFT)CT-ND |
| Maximum Power Dissipation (Abs): | 1.25 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 4 A |
| Maximum Drain Current (Abs) (ID): | 4 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









