1.3 W Power Field Effect Transistors (FET) 114

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FTS2053	Onsemi	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
FTD2015	Onsemi	N-CHANNEL		YES	1.3 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4 A
NTF3055-160T3LF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.16 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261	e0		235
CPH6438	Onsemi	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.2 A
NTF3055L175T1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.175 ohm	2 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0		235
NTF3055-100T3LF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	74 mJ	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.11 ohm	3 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e0		235
NTF3055-100T3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9 A	74 mJ	3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.11 ohm	3 A	DUAL	R-PDSO-G4	3	DRAIN	Not Qualified		TO-261AA	e0		235
NTF3055L175T3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.175 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0		235
NTF3055-160T3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.16 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261	e0		235
NTF3055L175T3LF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	65 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.175 ohm	2 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e0		235
STC5DNF30V	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.04 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
PHN210T	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A	13 mJ	3.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.1 ohm	3.4 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e4	30	260
PHN210T,118	NXP Semiconductors	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A	13 mJ	3.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Nickel/Palladium/Gold (Ni/Pd/Au)	.1 ohm	3.4 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e4	30	260
IRF7530PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A	33 mJ	5.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.03 ohm	5.4 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IRF7319PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ	4.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.029 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
IRLL024NQ	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	87 mJ	3.1 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.065 ohm	3.1 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified			e0
NX6008NBK	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		2.8 ohm	.27 A	DUAL	R-PDSO-G3	1				TO-236AB		30	260	1.9 pF	IEC-60134
BSH205G2A	Nexperia	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		5 mJ		3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	-55 Cel	TIN	.118 ohm	2.6 A	DUAL	R-PDSO-G3	1				TO-236AB	e3	30	260	32 pF	AEC-Q101; IEC-60134
934662514215	Nexperia	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		2.8 ohm	.27 A	DUAL	R-PDSO-G3					TO-236AB				1.9 pF	IEC-60134
DMG9926USD-13	Diodes Incorporated	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.024 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMN10H220LQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.22 ohm	1.4 A	DUAL	R-PDSO-G3				HIGH RELIABILITY		e3		260	17 pF	AEC-Q101; MIL-STD-202
DMP3165LQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.09 ohm	3.3 A	DUAL	R-PDSO-G3						e3		260	35 pF	AEC-Q101; MIL-STD-202
DMN2053UQ-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G3						e3			43 pF	AEC-Q101; IATF 16949
DMN2053UQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G3						e3			43 pF	AEC-Q101; IATF 16949
2SJ378TP	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.28 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	240
2SJ525	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	517 mJ	5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.2 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2230	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Tin/Lead (Sn/Pb)	2 ohm	2 A	SINGLE	R-PSIP-T3			Not Qualified			e0
2SK2846(TP)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SK2229	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	129 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.3 W	150 Cel	SILICON			.16 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3302(TP,F)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.5 A
2SK2835(TP,F)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
2SK2599(TP)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SK2599	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	112 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			3.2 ohm	2 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SJ676	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	191 mJ	2.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			2 ohm	2.5 A	SINGLE	R-PSIP-T3			Not Qualified
2SK2846(TP,F)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SK2846	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	93 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			5 ohm	2 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2835(TP)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
2SK3374	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2 A	122 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			4.6 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3302	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A	14.3 mJ	.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			18 ohm	.5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2400	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	180 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.3 W	150 Cel	SILICON			.3 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK2835	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	65 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
2SK3302(TP)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					.5 A
2SK2599(TP,F)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2 A
2SK2229TP	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	1.3 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.3 ohm	5 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	240
2SK2400(TP)	Toshiba	N-CHANNEL	SINGLE	NO	1.3 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
UPA2353T1G-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2				4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified			e6
UPA2351T1P-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2				4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified			e6
HAT2049T	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.