1.3 W Power Field Effect Transistors (FET) 114

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
UPA2350BT1G-E4-A	Renesas Electronics	N-CHANNEL	COMPLEX	YES	1.3 W	UNSPECIFIED	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-XBGA-B4			Not Qualified	e6
UPA2680T1E-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W							1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		3 A						e3		260
HAT2037T	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A
UPA622TT-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
UPA622TT-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		3 A						e6	10	260
UPA2350T1P-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified	e6
HAT2080T-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	1.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.85 ohm	1.2 A	DUAL	R-PDSO-G8	1		Not Qualified		20	260
UPA622TT-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
HAT2085T-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A	1.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.64 ohm	1.4 A	DUAL	R-PDSO-G8	1		Not Qualified
UPA2351T1G-E4-A	Renesas Electronics	N-CHANNEL	COMPLEX	YES	1.3 W	UNSPECIFIED	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-XBGA-B4			Not Qualified	e6
UPA622TT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		3 A						e0
UPA2350T1G-E4-A	Renesas Electronics	N-CHANNEL	COMPLEX	YES	1.3 W	UNSPECIFIED	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-XBGA-B4			Not Qualified	e6
HAT1051T	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A	9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.028 ohm	9 A	DUAL	R-PDSO-G8			Not Qualified
UPA2680T1E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	12 A	3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	125 Cel	SILICON	TIN LEAD	.06 ohm	3 A	DUAL	R-PDSO-N6		DRAIN SOURCE	Not Qualified	e0
UPA2353T1P-E4-A	Renesas Electronics	N-CHANNEL		YES	1.3 W												FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel
UPA622TT-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	1.3 W						ENHANCEMENT MODE	1		3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
UPA2350BT1P-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified	e6		260
UPA2351BT1P-E4-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.3 W	PLASTIC/EPOXY	SWITCHING		BALL	SQUARE	ENHANCEMENT MODE	2			4	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH			BOTTOM	S-PBGA-B4			Not Qualified	e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.