102 W Power Field Effect Transistors (FET) 8

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFS008N12MCT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

102 W

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

352 A

101 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.008 ohm

79 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

4.9 pF

NTMFC013NP10M5L

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

102 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

208 A

161 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0134 ohm

60 A

DUAL

R-PDSO-N8

DRAIN

17.5 pF

BUK6213-30A,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

102 W

ENHANCEMENT MODE

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

64 A

1

e3

30

260

BUK6213-30A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

102 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

257 A

267 mJ

64 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.013 ohm

55 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

e3

30

260

IPS60R460CEAKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

102 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

185 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.46 ohm

13.1 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

IPS60R460CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

102 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

185 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

.46 ohm

13.1 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

TK13E25D,S1X(S

Toshiba

N-CHANNEL

SINGLE

NO

102 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

TK13E25D

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

102 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

52 A

78 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

13 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.