TK13E25D,S1X(S by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TK13E25D,S1X(S
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 102 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TK13E25D,S1X(S Datasheet

NAME	DESCRIPTION
Maximum Power Dissipation (Abs):	102 W
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	13 A
Maximum Drain Current (Abs) (ID):	13 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO

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