Toshiba - TK13E25D,S1X(S

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TK13E25D,S1X(S by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TK13E25D,S1X(S
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 102 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet TK13E25D,S1X(S Datasheet
NAME DESCRIPTION
Other Names: TK13E25DS1XS
TK13E25DS1X(S
Maximum Power Dissipation (Abs): 102 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 13 A
Maximum Drain Current (Abs) (ID): 13 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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