Onsemi - NTMFC013NP10M5L

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NTMFC013NP10M5L by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFC013NP10M5L
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 102 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;
Datasheet NTMFC013NP10M5L Datasheet
In Stock609
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 60 A
Maximum Pulsed Drain Current (IDM): 208 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 102 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0134 ohm
Avalanche Energy Rating (EAS): 161 mJ
Other Names: 488-NTMFC013NP10M5LCT
488-NTMFC013NP10M5LTR
2832-NTMFC013NP10M5L
488-NTMFC013NP10M5LDKR
Maximum Feedback Capacitance (Crss): 17.5 pF
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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Pricing (USD)

Qty. Unit Price Ext. Price
609 $1.290 $785.610

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