104 W Power Field Effect Transistors (FET) 157

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPU95R450P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

43 A

29 mJ

14 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.45 ohm

14 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPP90R800C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15 A

157 mJ

6.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.8 ohm

6.9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPI50R299CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

289 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.299 ohm

12 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPB50R299CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

289 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.299 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPU95R450P7AKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

950 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

43 A

29 mJ

14 A

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.45 ohm

14 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPI90R800C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15 A

157 mJ

6.9 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.8 ohm

6.9 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IPB60R250CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

345 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.25 ohm

12 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IPW65R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IPW60R280P6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

TO-247

e3

IPW50R299CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

289 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.299 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

e3

IPP50R299CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

289 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.299 ohm

12 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

BSC022N03SG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

800 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0033 ohm

28 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

IPW90R800C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

15 A

157 mJ

6.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.8 ohm

6.9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AD

NOT SPECIFIED

NOT SPECIFIED

IRFH5210TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

220 A

86 mJ

55 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0149 ohm

10 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

IPI60R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

BSC019N02KSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

800 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.003 ohm

30 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

IPI65R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

BSC020N025SG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

800 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0031 ohm

29 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED

e3

260

IPW60R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

IPP60R250CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

345 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.25 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPP60R280P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IRF8302MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

250 A

260 mJ

31 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0018 ohm

31 A

BOTTOM

R-XBCC-N3

1

DRAIN

e3

BSC022N03S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

800 mJ

28 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0033 ohm

28 A

DUAL

R-PDSO-N8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

235

IRFH7107TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

104 W

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

75 A

1

IPW60R280P6FKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

IPW60R250CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

345 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.25 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

260

IPP65R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF6729MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

250 A

260 mJ

190 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0018 ohm

31 A

DUAL

R-PDSO-G3

1

DRAIN

Not Qualified

e3

IRLH7134TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

640 A

125 mJ

134 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0033 ohm

26 A

DUAL

R-PDSO-F5

1

DRAIN

IPP60R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

260

IRFH4210TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

104 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

1

IRFH5302DTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

130 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0037 ohm

29 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

40

260

IRFH5302DTR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

130 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0037 ohm

29 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

IPP60R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

IPW65R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IPP65R280E6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF7171MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

330 A

86 mJ

93 A

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0065 ohm

15 A

BOTTOM

R-XBCC-N3

1

DRAIN

60 pF

IPB60R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

IRFH7110TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

240 A

110 mJ

50 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0135 ohm

11 A

DUAL

R-PDSO-F5

DRAIN

IRFH5215TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

108 A

96 mJ

5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.058 ohm

5 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

30

260

IPI60R250CP

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

345 mJ

12 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.25 ohm

12 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

260

IRFH5215TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

108 A

96 mJ

5 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.058 ohm

5 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

IPD95R450P7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

950 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

43 A

29 mJ

14 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.45 ohm

14 A

SINGLE

R-PSSO-G2

1

TO-252

e3

IPB65R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

39 A

290 mJ

13.8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

13.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

IPW60R280C6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

284 mJ

13.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

NOT SPECIFIED

NOT SPECIFIED

IPP60R280P6

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

285 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.28 ohm

13.8 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

PSMN015-100YSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

168 A

62 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0179 ohm

42 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

MO-235

e3

30

260

10.6 pF

IEC-60134

DMJ70H600HCT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

104 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

97 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.6 ohm

8.5 A

SINGLE

R-PSFM-T3

TO-220AB

e3

40 pF

MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.