Infineon Technologies - IRFH7110TR2PBF

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IRFH7110TR2PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRFH7110TR2PBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 50 A;
Datasheet IRFH7110TR2PBF Datasheet
In Stock142
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 240 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 104 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0135 ohm
Avalanche Energy Rating (EAS): 110 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 50 A
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