Infineon Technologies - IRLH7134TRPBF

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IRLH7134TRPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRLH7134TRPBF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .0033 ohm;
Datasheet IRLH7134TRPBF Datasheet
In Stock812
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 640 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 104 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0033 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 125 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 40 V
Maximum Drain Current (Abs) (ID): 134 A
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