116 W Power Field Effect Transistors (FET) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

CSD18563Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

96 A

146 mJ

93 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.0108 ohm

15 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

NOT SPECIFIED

260

5.1 pF

CSD18533Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

107 A

140 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0085 ohm

17 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

30

260

9 pF

NTP185N60S5H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

116 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

124 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.185 ohm

15 A

SINGLE

R-PSFM-T3

TO-220AB

NTMT185N60S5H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

53 A

124 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.185 ohm

15 A

DUAL

S-PDSO-N8

1

DRAIN

e3

30

260

NVMFS6H824NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

722 A

1081 mJ

110 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0052 ohm

110 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

AEC-Q101

NVMFS6H824NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

722 A

1081 mJ

110 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0052 ohm

110 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

AEC-Q101

FCP13N60N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

116 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

235 mJ

13 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.258 ohm

13 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

NTHL185N60S5H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

116 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

53 A

124 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.185 ohm

15 A

SINGLE

R-PSFM-T3

DRAIN

TO-247

e3

NTMFS6H824NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

722 A

1081 mJ

110 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0052 ohm

110 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

BUK9520-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

116 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

208 A

110 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

116 W

175 Cel

SILICON

200 ns

225 ns

MATTE TIN

.02 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TO-220AB

e3

235 pF

BUK9620-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

116 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

208 A

110 mJ

52 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.02 ohm

52 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

BUK9520-55,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

116 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

208 A

110 mJ

52 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

116 W

175 Cel

SILICON

200 ns

225 ns

MATTE TIN

.02 ohm

52 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TO-220AB

e3

235 pF

N0604N-S19-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

116 W

60 V

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0065 ohm

82 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.