Renesas Electronics - N0604N-S19-AY

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N0604N-S19-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number N0604N-S19-AY
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 116 W; Maximum Drain-Source On Resistance: .0065 ohm; Minimum DS Breakdown Voltage: 60 V;
Datasheet N0604N-S19-AY Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 82 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 116 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 82 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0065 ohm
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