12.5 W Power Field Effect Transistors (FET) 25

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SI7117DN-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

UNSPECIFIED

SWITCHING

150 V

C BEND

SQUARE

ENHANCEMENT MODE

1

2.2 A

1.01 mJ

2.17 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.3 ohm

1.1 A

DUAL

S-XDSO-C5

1

DRAIN

Not Qualified

e3

30

260

PMPB20EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

7.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.2 A

1

e3

30

260

PMPB10XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

12.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

12.9 A

1

e3

30

260

PMPB23XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7 A

1

e3

30

260

PMPB29XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5 A

1

e3

30

260

PMPB20UN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

27 A

6.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.025 ohm

6.6 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

IEC-60134

PMPB16XN,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

28 A

10.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.021 ohm

7.2 A

DUAL

S-PDSO-N6

DRAIN

e3

IEC-60134

PMPB11EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

9 A

1

e3

30

260

PMPB13XNE,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8 A

1

e3

30

260

PMPB07R0UN

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

48 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.009 ohm

11.6 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

195 pF

IEC-60134

PMPB29XPEA

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

12 A

22.1 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.038 ohm

5 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

210 pF

AEC-Q101; IEC-60134

PMPB27EPA

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

25 A

26.8 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.029 ohm

6.1 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

AEC-Q101; IEC-60134

PMPB12R5EP

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

35 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.015 ohm

8.8 A

DUAL

S-PDSO-N6

1

DRAIN

LOGIC LEVEL COMPATIBLE

e4

30

260

139 pF

IEC-60134

PMPB07R3EN

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0086 ohm

12 A

DUAL

R-PDSO-N6

1

DRAIN

LOGIC LEVEL COMPATIBLE

e4

30

260

52 pF

IEC-60134

PXN010-30QL

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

264 A

18 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0102 ohm

28 A

DUAL

S-PDSO-F8

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

33 pF

IEC-60134

PXN010-30QLJ

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

264 A

18 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0102 ohm

28 A

DUAL

S-PDSO-F8

1

DRAIN

LOGIC LEVEL COMPATIBLE

e3

30

260

33 pF

IEC-60134

PMPB12R5EPX

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

35 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

.015 ohm

8.8 A

DUAL

S-PDSO-N6

1

DRAIN

LOGIC LEVEL COMPATIBLE

e4

139 pF

IEC-60134

PMPB10XNX

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

38 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.013 ohm

9.5 A

DUAL

S-PDSO-N6

DRAIN

119 pF

IEC-60134

DMP45H21DHE-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

30 mJ

.6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

21 ohm

.6 A

DUAL

R-PDSO-G4

1

DRAIN

e3

260

RJK03M6DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

RJK03E2DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

64 A

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0127 ohm

16 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

RJK03M6DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE

YES

12.5 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

RJK03F8DNS-00#J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

64 A

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0104 ohm

16 A

DUAL

S-PDSO-N8

DRAIN

Not Qualified

RJK03F8DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

64 A

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0104 ohm

16 A

DUAL

S-PDSO-N8

DRAIN

Not Qualified

RJK03E2DNS-00-J5

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

12.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

64 A

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0127 ohm

16 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.