125 W Power Field Effect Transistors (FET) 1,091

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP10NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

230 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.7 ohm

9 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB6NA60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

215 mJ

6.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6.5 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

STI15NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

300 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.299 ohm

14 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

40

245

IRF451

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

450 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

52 A

13 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

13 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-3

e0

IRF452

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

500 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

44 A

11 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-3

e0

STP5N80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

320 mJ

5.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

170 ns

MATTE TIN

2 ohm

5.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

85 pF

IRF743

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

8.3 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e0

STB5NC90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

900 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

220 mJ

4.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

2.5 ohm

4.6 A

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

e3

STL25N60M2-EP

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

64 A

180 mJ

16 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.205 ohm

16 A

SINGLE

S-PSSO-N4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

1.6 pF

STD78N75F4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

185 mJ

70 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

70 A

SINGLE

R-PSSO-G2

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

STB10NA40-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

500 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.55 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

STB6NA60-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

26 A

215 mJ

6.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

6.5 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-262AA

e0

STP9NK65Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

25.6 A

200 mJ

6.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

6.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP4NA100

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16.8 A

160 mJ

4.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3.5 ohm

4.2 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRFZ42

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

172 A

350 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

195 ns

110 ns

TIN LEAD

.035 ohm

43 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

300 pF

STB11NK50ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

190 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.52 ohm

10 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

e3

30

245

STP9NC60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

850 mJ

9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.75 ohm

9 A

SINGLE

R-PSFM-T3

1

Not Qualified

TO-220AB

e3

IRF841

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

93 ns

125 ns

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-220AB

e3

110 pF

STB18N20T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

72 A

50 mJ

18 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

135 ns

MATTE TIN

.18 ohm

18 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

70 pF

STD100N10LF7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.011 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

STP22NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

300 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.22 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STB11NB40

STMicroelectronics

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

STP6NC80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

21 A

237 mJ

5.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

5.4 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP5NB90

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

318 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.5 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

STW30NF20

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

140 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.075 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STB6NA80T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

23 A

165 mJ

5.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.9 ohm

5.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STB11NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

300 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

12 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

STD150NH02L-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

24 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

600 A

500 mJ

150 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0035 ohm

150 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

LOW THRESHOLD

TO-251AA

e3

STW11NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

300 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN/TIN SILVER COPPER

.38 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AB

e3/e1

NOT SPECIFIED

NOT SPECIFIED

STP16NB25

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

250 mJ

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.28 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STP9NA50

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

35 A

390 mJ

8.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

8.8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STI15NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

300 mJ

14 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.299 ohm

14 A

SINGLE

R-PSIP-T3

Not Qualified

TO-262AA

e3

STW16NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

470 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN/TIN SILVER COPPER

.26 ohm

15 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3/e1

NOT SPECIFIED

NOT SPECIFIED

STB15NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

300 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.299 ohm

14 A

SINGLE

R-PSSO-G2

1

Not Qualified

e3

STB14NM65N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

300 mJ

12 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.38 ohm

12 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

30

245

STP5NA80

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

19 A

110 mJ

4.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.4 ohm

4.7 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

STB7NC70Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

700 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

238 mJ

6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.38 ohm

6 A

SINGLE

R-PSSO-G2

Not Qualified

TO-263AB

e3

STP23NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

254 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

17 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STB7NK80Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20.8 A

210 mJ

5.2 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.8 ohm

5.2 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-262AA

e3

STW15NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

300 mJ

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.299 ohm

14 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247AC

e3

STB8NA50T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

350 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

IRF453

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

450 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

44 A

11 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH VOLTAGE, FAST SWITCHING

TO-3

e0

STB8NA50-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

350 mJ

8 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.85 ohm

8 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

STB6NA80-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

23 A

165 mJ

5.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

1.9 ohm

5.7 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e0

PHB4N50T/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

24 A

280 mJ

5.9 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.5 ohm

5.9 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

BUK110-50DL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

45 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.035 ohm

45 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

PHB14NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

56 A

70 mJ

14 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.23 ohm

14 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHB69N03TT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

125 mJ

69 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.014 ohm

69 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

ESD PROTECTED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.