125 W Power Field Effect Transistors (FET) 1,091

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFM9140D

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

120 ns

-55 Cel

150 ns

Tin/Lead (Sn/Pb)

.22 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

e0

IRFM9240

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.52 ohm

11 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

IPP70N10S3L-12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

154 mJ

70 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0123 ohm

70 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

260

OM11N60SAZ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

600 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

52 A

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

BUZ84A

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

BUZ384

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

10.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10.5 A

IPI70N12S3-11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

120 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

410 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0116 ohm

70 A

SINGLE

R-PSIP-T3

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

158 pF

AEC-Q101

IRFMG40D

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

1000 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

16 A

530 mJ

3.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.2 ohm

3.9 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IPI70N10S3L12AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

154 mJ

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0123 ohm

70 A

SINGLE

R-PSIP-T3

LOGIC LEVEL COMPATIBLE

TO-262AA

e3

BUZ30ASMDG

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

84 A

450 mJ

21 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.13 ohm

21 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

BUZ330

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

38 A

670 mJ

9.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.6 ohm

9.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-218AA

e0

COM140T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

100 V

THROUGH-HOLE

SQUARE

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.32 ohm

14 A

SINGLE

S-MSFM-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

BUZ357

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

850 mJ

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2 ohm

5.1 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-218AA

e0

IRFM240U

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

18 A

e0

OM6112CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

BUZ326

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

42 A

570 mJ

10.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

10.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-218

e0

IRFM9140PBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

120 ns

-55 Cel

150 ns

.22 ohm

18 A

SINGLE

S-XSFM-P3

ISOLATED

HIGH RELIABILITY

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

BSM691F

Infineon Technologies

N-CHANNEL

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

SOLDER LUG

RECTANGULAR

ENHANCEMENT MODE

6

19 A

4.8 A

17

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

4.8 A

UPPER

R-PUFM-D17

ISOLATED

Not Qualified

COM340T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

400 V

THROUGH-HOLE

SQUARE

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.59 ohm

10 A

SINGLE

S-MSFM-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

BUZ350

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

88 A

450 mJ

22 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.12 ohm

22 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218AA

e3

JANHCA2N7222

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

UNSPECIFIED

SWITCHING

500 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

32 A

700 mJ

8 A

3

UNCASED CHIP

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

8 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/596F

IPB70N10S3L-12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

154 mJ

70 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.012 ohm

70 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

260

OM6111SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

400 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

40 A

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.55 ohm

10 A

SINGLE

S-MSFM-P3

1

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

OM6010CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

IPB70N12S3-11

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

120 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0113 ohm

70 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

158 pF

AEC-Q101

IRFAE40

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

800 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

19 A

550 mJ

4.8 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.3 ohm

4.8 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

BUZ381

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.9 A

e0

BUZ349

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

220 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

32 A

SINGLE

R-PSFM-T3

Not Qualified

TO-218AA

NOT SPECIFIED

NOT SPECIFIED

IPS118N10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

120 mJ

75 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.0118 ohm

75 A

SINGLE

R-PSIP-T3

Not Qualified

TO-251AA

e3

OM75N05SA

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

50 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

225 A

900 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.018 ohm

75 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

COM240T

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

200 V

THROUGH-HOLE

SQUARE

ENHANCEMENT MODE

1

56 A

14 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.21 ohm

14 A

SINGLE

S-MSFM-T3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-257AA

e0

JANKCA2N7237

Infineon Technologies

P-CHANNEL

SINGLE

YES

125 W

UNSPECIFIED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 A

UPPER

R-XUUC-N3

1

DRAIN

Not Qualified

MIL-19500/595F

BUZ30A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

84 A

450 mJ

21 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.13 ohm

21 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IRFMG40U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

1000 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

16 A

530 mJ

3.9 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4.2 ohm

3.9 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

IPI12CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

268 A

154 mJ

67 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0129 ohm

67 A

SINGLE

R-PSIP-T3

1

Not Qualified

FAST SWITCHING

TO-262AA

e3

IPI70N10S3L-12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

154 mJ

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0123 ohm

70 A

SINGLE

R-PSIP-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-262AA

e3

OM11N60CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

11 A

COM250A

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

80 A

25 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.1 ohm

25 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

OM11N55SAZ

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

550 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

52 A

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

11 A

SINGLE

S-MSFM-P3

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

e0

BUZ64

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

METAL

SWITCHING

400 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

46 A

670 mJ

11.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.4 ohm

11.5 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

BUZ221

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

5.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.5 A

e0

BUZ63

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

5.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.9 A

e0

BUZ36

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

22 A

e0

OM6012CSA

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

OM6010SA

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

200 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

18 A

SINGLE

S-MSFM-P3

1

ISOLATED

Not Qualified

HIGH RELIABILITY

TO-254AA

JANHCA2N7236

Infineon Technologies

P-CHANNEL

SINGLE

YES

125 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

UNCASED CHIP

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

18 A

UPPER

R-XUUC-N3

DRAIN

Qualified

e0

MIL-19500/595F

IRFM440U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

500 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

32 A

700 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.95 ohm

8 A

SINGLE

R-MSFM-P3

ISOLATED

Not Qualified

TO-254AA

e0

BUZ211

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

500 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

36 A

9 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

9 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.