125 W Power Field Effect Transistors (FET) 1,091

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPD12CNE8NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

85 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

268 A

154 mJ

67 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0124 ohm

67 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

TO-252AA

e3

260

IPW65R095C7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

118 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.095 ohm

24 A

SINGLE

R-PSFM-T3

DRAIN

HIGH RELIABILITY

TO-247

e3

SPI12N50C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34.8 A

340 mJ

11.6 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

11.6 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-262AA

NOT SPECIFIED

NOT SPECIFIED

IRF643

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

.22 ohm

16 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUZ14

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

39 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

39 A

e0

BUZ16

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

60 A

e0

SPP11N65C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRF5M4905SCVPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IRF244

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

BSC016N03MSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

340 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.002 ohm

28 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

IRF9642

Infineon Technologies

P-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

36 A

9 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN OVER NICKEL

.7 ohm

9 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

JANTXV2N7237U

Infineon Technologies

P-CHANNEL

SINGLE

YES

125 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

44 A

500 mJ

11 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.52 ohm

11 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

HIGH RELIABILITY

TO-267AB

e0

IRF5M4905SCXA

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

TIN LEAD

.03 ohm

35 A

SINGLE

S-XSFM-P3

Not Qualified

TO-254AA

e0

MIL-19500

IPB12CNE8NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

85 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

268 A

154 mJ

67 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0129 ohm

67 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

245

JANTXV2N7221U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

40 A

650 mJ

10 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.7 ohm

10 A

BOTTOM

R-XBCC-N3

ISOLATED

Qualified

HIGH RELIABILITY

e0

MIL-19500

IPP12CN10LG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

276 A

150 mJ

69 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.012 ohm

69 A

SINGLE

R-PSFM-T3

1

Not Qualified

LOGIC LEVL COMPATIBLE

TO-220AB

e3

IRF5M4905SCXBPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IPB12CN10NG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

268 A

154 mJ

67 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0126 ohm

67 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

FAST SWITCHING

TO-263AB

e3

245

IPP60R090CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

97 A

114 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.09 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

SPB11N60C3

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.38 ohm

11 A

SINGLE

R-PSSO-G2

1

Not Qualified

AVALANCHE RATED

TO-263AB

e3

IRF5M4905SCX

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

TIN LEAD

.03 ohm

35 A

SINGLE

S-XSFM-P3

Not Qualified

TO-254AA

e0

MIL-19500

SPB11N60C2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

22 A

340 mJ

11 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.38 ohm

11 A

SINGLE

R-PSSO-G2

Not Qualified

AVALANCHE RATED

TO-263AB

e0

SPW11N60S5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

340 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.38 ohm

11 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

AVALANCHE RATED

TO-247

NOT SPECIFIED

NOT SPECIFIED

IRF5M4905SCXAPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IPB07N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

30 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0097 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

TO-263AB

e0

IRF5M4905DPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

JANTXV2N7222

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

32 A

700 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.95 ohm

8 A

SINGLE

S-MSFM-P3

ISOLATED

Qualified

HIGH RELIABILITY

TO-254AA

e0

MIL-19500/596

BSC018N04LSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

295 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0025 ohm

30 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

IRF5M5210U

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

136 A

520 mJ

34 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

178 ns

-55 Cel

220 ns

TIN LEAD

.07 ohm

34 A

SINGLE

S-XSFM-P3

Not Qualified

TO-254AA

e0

IRF9140

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

100 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

2

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

120 ns

-55 Cel

150 ns

TIN LEAD

.23 ohm

18 A

BOTTOM

O-MBFM-P2

DRAIN

Not Qualified

TO-204AA

e0

IPD082N10N3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

110 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0082 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

BSC047N08NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

310 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0047 ohm

100 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

IPD07N03L

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0099 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-252

e0

IPD046N08N5

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

75 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0046 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

40 pF

JANTXV2N7236

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

METAL

SWITCHING

100 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.22 ohm

18 A

SINGLE

S-MSFM-P3

ISOLATED

Qualified

HIGH RELIABILITY

TO-254AA

e0

MIL-19500/595

IRF5M4905SCVA

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

TIN LEAD

.03 ohm

35 A

SINGLE

S-XSFM-P3

Not Qualified

TO-254AA

e0

MIL-19500

SPW11N60C2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

22 A

340 mJ

11 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.38 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-247

e0

IRF5M4905SCXPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

JANTX2N7221U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

400 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

40 A

650 mJ

10 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.7 ohm

10 A

BOTTOM

R-XBCC-N3

ISOLATED

Qualified

HIGH RELIABILITY

e0

MIL-19500

IPI70N10S3-12

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

410 mJ

70 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0116 ohm

70 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-262AA

e3

260

JANTXV2N7219U

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

72 A

450 mJ

18 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.25 ohm

18 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

HIGH RELIABILITY

e0

MIL-19500/596

IRF5M4905SCVAPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IRF5M4905SCXCPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

MIL-19500

IPP60R090CFD7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

97 A

114 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.09 ohm

25 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IRF5M4905UPBF

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

UNSPECIFIED

SWITCHING

55 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

140 A

490 mJ

35 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

200 ns

-55 Cel

225 ns

.03 ohm

35 A

SINGLE

S-XSFM-P3

TO-254AA

NOT SPECIFIED

NOT SPECIFIED

IRF40H210

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

370 mJ

100 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0017 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

518 pF

IPB80P04P4-05

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

64 mJ

80 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0052 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

BUZ16S2

Infineon Technologies

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

48 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

48 A

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.