Infineon Technologies - IRF5M4905SCVPBF

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IRF5M4905SCVPBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF5M4905SCVPBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
Datasheet IRF5M4905SCVPBF Datasheet
In Stock396
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 200 ns
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 140 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 125 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 225 ns
JESD-30 Code: S-XSFM-P3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .03 ohm
Avalanche Energy Rating (EAS): 490 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 55 V
Reference Standard: MIL-19500
Maximum Drain Current (Abs) (ID): 35 A
Peak Reflow Temperature (C): NOT SPECIFIED
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