150 W Power Field Effect Transistors (FET) 986

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

SSI50N05

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.024 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

SSH60N10

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

180 A

790 mJ

60 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

406 ns

840 ns

.03 ohm

60 A

SINGLE

R-PSFM-T3

Not Qualified

IRFWZ40

Samsung

N-CHANNEL

SINGLE

YES

150 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.028 ohm

35 A

SINGLE

R-PSSO-G2

Not Qualified

SSH20N50

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

150 Cel

SILICON

410 ns

840 ns

.3 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

SSI50N06

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.024 ohm

50 A

SINGLE

R-PSIP-T3

Not Qualified

SSW50N05

Samsung

N-CHANNEL

SINGLE

YES

150 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.024 ohm

50 A

SINGLE

R-PSSO-G2

Not Qualified

SSH5N90

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

900 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.5 ohm

5 A

SINGLE

R-PSFM-T3

Not Qualified

IRLZ40

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

125 ns

600 ns

.04 ohm

35 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRLZ44

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

50 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

125 ns

600 ns

.04 ohm

35 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFIZ44

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.028 ohm

35 A

SINGLE

R-PSIP-T3

Not Qualified

IRFP141

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

230 mJ

29 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

133 ns

135 ns

.077 ohm

28 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP9241

Samsung

P-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

380 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

45 ns

30 ns

.5 ohm

11 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP9142

Samsung

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

60 A

560 mJ

16 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

45 ns

32 ns

TIN LEAD

.2 ohm

15 A

SINGLE

R-PSFM-T3

Not Qualified

e0

IRFP443

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

510 mJ

7.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

56 ns

104 ns

1.1 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP244

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

56 A

550 mJ

15 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

120 ns

154 ns

.28 ohm

14 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP142

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

230 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

133 ns

135 ns

TIN LEAD

.1 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

e0

IRFIZ40

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

50 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.028 ohm

35 A

SINGLE

R-PSIP-T3

Not Qualified

IRFP242

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

580 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

90 ns

140 ns

TIN LEAD

.22 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

e0

IRFP342

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

520 mJ

8.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

62 ns

111 ns

.8 ohm

8.3 A

SINGLE

R-PSFM-T3

Not Qualified

IRFZ45

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

190 A

53 mJ

35 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 W

175 Cel

SILICON

242 ns

205 ns

TIN LEAD

.035 ohm

35 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

IRFP143

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

100 A

230 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

133 ns

135 ns

TIN LEAD

.1 ohm

25 A

SINGLE

R-PSFM-T3

Not Qualified

e0

IRL540

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

140 ns

135 ns

.11 ohm

24 A

SINGLE

R-PSFM-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

IRFP243

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

64 A

580 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

90 ns

140 ns

TIN LEAD

.22 ohm

16 A

SINGLE

R-PSFM-T3

Not Qualified

e0

IRFP440

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8.8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

56 ns

104 ns

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP241

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

580 mJ

19 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

90 ns

140 ns

.18 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

IRFP341

Samsung

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

350 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

520 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

62 ns

111 ns

.55 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.