Samsung - IRFP241

IRFP241 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number IRFP241
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; JESD-30 Code: R-PSFM-T3; Avalanche Energy Rating (EAS): 580 mJ;
Datasheet IRFP241 Datasheet
In Stock380
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 90 ns
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 72 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 150 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 140 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .18 ohm
Avalanche Energy Rating (EAS): 580 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 150 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 19 A
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Pricing (USD)

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380 - -

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