179 W Power Field Effect Transistors (FET) 21

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTBG080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

171 mJ

30 A

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

44 ns

-55 Cel

52 ns

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSSO-G7

1

DRAIN

TO-263CB

e3

30

245

7.9 pF

PSMN1R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

179 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

SIHB17N80AE-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

127 mJ

15 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

88 ns

-55 Cel

152 ns

.29 ohm

15 A

SINGLE

R-PDSO-G2

DRAIN

TO-263AB

5 pF

CSD19531KCS

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

285 A

180 mJ

100 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0088 ohm

100 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220

e3

17 pF

SIHG17N80AE-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

127 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

88 ns

-55 Cel

152 ns

.29 ohm

15 A

SINGLE

R-PSFM-T3

TO-247AC

5 pF

NVBG080N120SC1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

SWITCHING

1200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

171 mJ

7

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON CARBIDE

44 ns

-55 Cel

52 ns

Matte Tin (Sn) - annealed

.11 ohm

30 A

SINGLE

R-PSSO-G7

1

DRAIN

TO-263CB

e3

30

245

7.9 pF

AEC-Q101

NTMFS5C406NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

439 mJ

353 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0008 ohm

353 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

150 pF

NVMFS5C406NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

439 mJ

353 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0008 ohm

353 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

150 pF

AEC-Q101

NTMFS5C406NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

498 mJ

362 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0011 ohm

362 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

140 pF

NVMFS5C406NLWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

498 mJ

362 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0011 ohm

362 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

140 pF

AEC-Q101

NVMFS5C406NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

439 mJ

353 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0008 ohm

353 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

150 pF

AEC-Q101

NVMFS5C406NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

498 mJ

362 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0011 ohm

362 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

140 pF

AEC-Q101

PSMN1R5-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

179 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

IPI120N08S404AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0044 ohm

120 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

e3

200 pF

AEC-Q101

IPI120N08S4-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0044 ohm

120 A

SINGLE

R-PSIP-T3

1

DRAIN

TO-262AA

200 pF

AEC-Q101

IPB120N08S4-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0041 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

200 pF

AEC-Q101

IPB120N08S404ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0041 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

200 pF

AEC-Q101

IPP120N08S404AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0044 ohm

120 A

SINGLE

R-PSFM-T3

1

DRAIN

TO-220AB

e3

200 pF

AEC-Q101

IPB083N15N5LF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

420 A

10 mJ

105 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0083 ohm

105 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB033N10N5LF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

179 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

636 A

273 mJ

120 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0033 ohm

159 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

13 pF

IPP120N08S4-04

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

179 W

PLASTIC/EPOXY

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

480 A

310 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0044 ohm

120 A

SINGLE

R-PSFM-T3

1

DRAIN

TO-220AB

e3

200 pF

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.