Vishay Intertechnology - SIHB17N80AE-GE3

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SIHB17N80AE-GE3 by Vishay Intertechnology

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Manufacturer Vishay Intertechnology
Manufacturer's Part Number SIHB17N80AE-GE3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 179 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
Datasheet SIHB17N80AE-GE3 Datasheet
In Stock60,149
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 88 ns
Maximum Drain Current (ID): 15 A
Maximum Pulsed Drain Current (IDM): 32 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 179 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 152 ns
JESD-30 Code: R-PDSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .29 ohm
Avalanche Energy Rating (EAS): 127 mJ
Maximum Feedback Capacitance (Crss): 5 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 800 V
Maximum Drain Current (Abs) (ID): 15 A
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Pricing (USD)

Qty. Unit Price Ext. Price
60,149 $1.303 $78,374.147

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