2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
UPA1820GR-9JG-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		12 A							e6
UPA1873GR-9JG	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.029 ohm	6 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA1707G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.021 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA2753GR-A	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	6.4 mJ	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0364 ohm	8 A	DUAL	R-PDSO-G8		Not Qualified			e6	10	260
UPA2754GR-A	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	88 A	12.1 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Bismuth (Sn98Bi2)	.0186 ohm	11 A	DUAL	R-PDSO-G8		Not Qualified			e6	10	260
UPA2719AGR-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	10 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0255 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified				NOT SPECIFIED	NOT SPECIFIED
UPA1764G(0)-E1-AZ	Renesas Electronics	N-CHANNEL		YES	2 W										7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A								NOT SPECIFIED	NOT SPECIFIED
UPA1707G-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.021 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified			e6	10	260
UPA1725G-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.03 ohm	7 A	DUAL	R-PDSO-G8		Not Qualified			e6	10	260
UPA1703	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.017 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified
UPA2755GR-E2	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
UPA1872BGR-9JG-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
UPA2702GR-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	16.9 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0172 ohm	13 A	DUAL	R-PDSO-G8		Not Qualified			e6	10	260
2SJ356-T1-AY	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			2 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A								NOT SPECIFIED	NOT SPECIFIED
UPA1912TE	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.07 ohm	4.5 A	DUAL	R-PDSO-G6		Not Qualified	ESD PROTECTED		e0			122 pF
UPA2781GR-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		13 A							e6		260
UPA1812GR-9JG	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.069 ohm	5 A	DUAL	R-PDSO-G8		Not Qualified
UPA1890GR-9JG	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.047 ohm	6 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA2710GR-E2-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			15 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		15 A							e6		260
UPA1726G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0125 ohm	12 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA2752GR-E1-AT	Renesas Electronics	N-CHANNEL		YES	2 W										8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		8 A							e3		260
UPA2754GR	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	88 A	12.1 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0186 ohm	11 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA2718AGR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	16.9 mJ	13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.0182 ohm	13 A	DUAL	R-PDSO-G8		Not Qualified			e3		260
UPA1725G-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		7 A							e3		260
UPA2756GR	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	1.6 mJ	4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.15 ohm	4 A	DUAL	R-PDSO-G8	1	Not Qualified
UPA1840GR-9JG-E2-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.2 A
UPA1715G	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0175 ohm	11 A	DUAL	R-PDSO-G8		Not Qualified
UPA1930TE-T1-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH		4.5 A	DUAL	R-PDSO-G6		Not Qualified	ESD PROTECTED		e6
HAT2199R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.025 ohm	11 A	DUAL	R-PDSO-G8	1	Not Qualified				20	260
UPA1728G-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
UPA1706G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.012 ohm	13 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA2780GR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A		14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0137 ohm	14 A	DUAL	R-PDSO-G8		Not Qualified			e0
2SJ212	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN LEAD		.5 A							e0
UPA2770GR-E2-AY	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A	4.9 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Matte Tin (Sn)	.035 ohm	7 A	DUAL	R-PDSO-G8					e3
UPA1900TE-T2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A
UPA2757GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	2.5 mJ	5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G8		Not Qualified			e3
UPA1728G-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
UPA2790GR-E2-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A								NOT SPECIFIED	NOT SPECIFIED
UPA1760G-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A								10	260
UPA1856GR-9JG-E1-AT	Renesas Electronics	P-CHANNEL		YES	2 W										4.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				4.5 A								NOT SPECIFIED	NOT SPECIFIED
UPA2751GR-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W										9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		9 A							e6
UPA1804GR-9JG-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
UPA1728	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	81 mJ	9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.034 ohm	9 A	DUAL	R-PDSO-G8		Not Qualified			e0
UPA1874BGR-9JG-E2-AT	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
UPA1872BGR-9JG-E1-A	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.018 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified			e6
UPA1731G	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.022 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified			e0
HAT2027R	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	56 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.053 ohm	7 A	DUAL	R-PDSO-G8		Not Qualified		MS-012AA
UPA2706GR-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		11 A							e6

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.