2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SJ197-T1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			1.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A								NOT SPECIFIED	NOT SPECIFIED
UPA1723G-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0087 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified		e6	10	260
UPA2719AGR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	10 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0255 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
UPA1727G-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		10 A							e6	10	260
UPA2781GR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0172 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified		e0
HAT1053M	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE AND RESISTOR	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A		5.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.064 ohm	5.5 A	DUAL	R-PDSO-G6			Not Qualified
UPA2717GR-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	22.5 mJ	15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0104 ohm	15 A	DUAL	R-PDSO-G8			Not Qualified			10	260
UPA1764G(0)-E2-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
UPA2755AGR-E1-AT	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A	6.4 mJ	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.029 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified		e3		260
UPA2702GR-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		13 A							e6
UPA1700A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.05 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
UPA1873GR-9JG-E2-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
2SJ197-T2-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			1.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				1.5 A								NOT SPECIFIED	NOT SPECIFIED
UPA2755GR-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	6.4 mJ	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.029 ohm	8 A	DUAL	R-PDSO-G8			Not Qualified			10	260
UPA1902TE-T2	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
UPA2717GR-E1-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			15 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		15 A							e6
UPA2713GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			8 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A								NOT SPECIFIED	NOT SPECIFIED
UPA1830GR-9JG-E2-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			9 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		9 A							e6
UPA1726G-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		12 A							e6		260
2SJ330	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.05 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		e0
UPA1930TE-T2-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH		4.5 A	DUAL	R-PDSO-G6			Not Qualified	ESD PROTECTED	e6
UPA1912TE-T1-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.07 ohm	4.5 A	DUAL	R-PDSO-G6					e6			122 pF
2SJ330-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.05 ohm	20 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			10	260
UPA1808GR-9JG-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9.5 A
UPA1709G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.02 ohm	9 A	DUAL	R-PDSO-G8			Not Qualified		e0
UPA1840GR-9JG-E2	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.2 A
UPA2750GR-A	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	36 A	8.1 mJ	9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0239 ohm	9 A	DUAL	R-PDSO-G8			Not Qualified		e6	10	260
UPA1900TE-T2-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			5.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A
UPA2719GR-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	10 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0255 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified			10	260
2SJ197-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	3 A		1.5 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	1.5 ohm	1.5 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified		e6	10	260
UPA1764G-E1-AZ	Renesas Electronics	N-CHANNEL		YES	2 W										7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A								NOT SPECIFIED	NOT SPECIFIED
HAT2208R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.035 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified			20	260
2SJ356-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4 A		2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.95 ohm	2 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified	ESD PROTECTED	e6	10	260
UPA2780GR-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		14 A							e3		260
UPA1902TE-T2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
UPA1731G-E2-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.022 ohm	10 A	DUAL	R-PDSO-G8					e6		260
UPA1728G-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9 A
UPA2717GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			15 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A								NOT SPECIFIED	NOT SPECIFIED
UPA2716AGR-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	19.6 mJ	14 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0135 ohm	14 A	DUAL	R-PDSO-G8			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
UPA1792G(0)-E1-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										5.8 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.8 A								NOT SPECIFIED	NOT SPECIFIED
UPA1792G-A	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	27.2 A		5.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.042 ohm	6.8 A	DUAL	R-PDSO-G8			Not Qualified		e6	10	260
UPA1763G(0)-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W										4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		4.5 A							e6
UPA1706G-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.012 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified		e6	10	260
UPA1806GR-9JG-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		13 A							e6
UPA1872GR-9JG-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W										10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		10 A							e6
UPA1792G	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	27.2 A		5.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.042 ohm	6.8 A	DUAL	R-PDSO-G8			Not Qualified		e0
UPA2756GR-E2-AT	Renesas Electronics	N-CHANNEL		YES	2 W										4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A								NOT SPECIFIED	NOT SPECIFIED
UPA1912TE-T2-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	4.5 A	DUAL	R-PDSO-G6								122 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.