2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
UPA2717GR-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			15 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A						NOT SPECIFIED	NOT SPECIFIED
UPA1708G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.04 ohm	7 A	DUAL	R-PDSO-G8		Not Qualified	e0
UPA1764G-AT	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
2SJ212-T2-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				.5 A						NOT SPECIFIED	NOT SPECIFIED
UPA1873GR-9JG-E1-AT	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A
UPA1727G	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		10 A					e0
2SJ358	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	6 A		3 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.4 ohm	3 A	SINGLE	R-PSSO-F3	DRAIN	Not Qualified	e0
HAT3006R	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	52 A		6.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.08 ohm	6.5 A	DUAL	R-PDSO-G8		Not Qualified
UPA2702GR-E2-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		13 A					e6
UPA1811GR-9JG	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.12 ohm	4 A	DUAL	R-PDSO-G8		Not Qualified
UPA2753GR(0)-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A
UPA2710GR	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	22.5 mJ	15 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.011 ohm	15 A	DUAL	R-PDSO-G6		Not Qualified	e0
2SJ197	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			1.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN LEAD		1.5 A					e0
UPA2753GR-E2-AT	Renesas Electronics	N-CHANNEL		YES	2 W										8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				8 A						NOT SPECIFIED	NOT SPECIFIED
UPA1717G-E1-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		6 A					e6
HAT1065R-EL-E	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1 A		.25 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		10 ohm	.25 A	DUAL	R-PDSO-G8		Not Qualified		NOT SPECIFIED	NOT SPECIFIED
UPA2701GR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	19.6 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0137 ohm	14 A	DUAL	R-PDSO-G8		Not Qualified	e0
UPA1724G-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		10 A					e6
UPA2793GR(0)-E2-AY	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		7 A					e3
UPA2782GR-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		11 A					e6
UPA1853GR-9JG	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.18 ohm	2.5 A	DUAL	R-PDSO-G8		Not Qualified
2SK591	Renesas Electronics	N-CHANNEL	SINGLE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.07 ohm	15 A	SINGLE	R-PSFM-T3		Not Qualified	e0
UPA1819GR-9JG-E1-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			12 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		12 A					e6
UPA2791GR-E2-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	2.5 mJ	5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G8		Not Qualified	e3
HAT1126R-EL-E	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A						NOT SPECIFIED	NOT SPECIFIED
UPA1874GR-9JG	Renesas Electronics	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	80 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0195 ohm	8 A	DUAL	R-PDSO-G8		Not Qualified
2SJ355	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4 A		2 A	3	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.6 ohm	2 A	SINGLE	R-PSSO-F3	DRAIN	Not Qualified	e0
UPA2791GR-E1-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	2.5 mJ	5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G8		Not Qualified	e3
UPA2790GR	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	3.6 mJ	6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.053 ohm	6 A	DUAL	R-PDSO-G8		Not Qualified	e0
HAT2028R	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.16 ohm	4 A	DUAL	R-PDSO-G8		Not Qualified
UPA1763G-A	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	60 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.066 ohm	4.5 A	DUAL	R-PDSO-G8		Not Qualified	e6	10	260
UPA1726G-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0125 ohm	12 A	DUAL	R-PDSO-G8		Not Qualified	e6	10	260
UPA1912TE-T2-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	4.5 A	DUAL	R-PDSO-G6						122 pF
UPA2719GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	10 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0255 ohm	10 A	DUAL	R-PDSO-G8				NOT SPECIFIED	NOT SPECIFIED
UPA2782GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				11 A
UPA1731G-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.022 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified	e6	10	260
UPA1723G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0087 ohm	13 A	DUAL	R-PDSO-G8		Not Qualified	e0
UPA1809GR-9JG	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.032 ohm	8 A	DUAL	R-PDSO-G8		Not Qualified	e0
UPA1763G-E1-AT	Renesas Electronics	N-CHANNEL		YES	2 W										4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		4.5 A					e3		260
UPA2793GR(0)-E1-AZ	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A						NOT SPECIFIED	NOT SPECIFIED
UPA1803GR-9JG-E1-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		8 A					e6
UPA1808GR-9JG-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9.5 A
UPA1724G-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A						NOT SPECIFIED	NOT SPECIFIED
UPA2756GR-E1-AT	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
UPA1721G	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.017 ohm	10 A	DUAL	R-PDSO-G8		Not Qualified	e0
UPA1763G(0)-E1-AT	Renesas Electronics	N-CHANNEL		YES	2 W										4.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		MATTE TIN		4.5 A					e3		260
UPA2702GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				13 A						NOT SPECIFIED	NOT SPECIFIED
UPA1754G	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.053 ohm	7 A	DUAL	R-PDSO-G8		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.