2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
UPA1840GR-9JG	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A		2.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.5 ohm	2.2 A	DUAL	R-PDSO-G8	1		Not Qualified
UPA2718GR	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	16.9 mJ	13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.0145 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified			e0
2SK659	Renesas Electronics	N-CHANNEL	SINGLE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.095 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	LOGIC LEVEL COMPATIBLE		e0
UPA2792AGR-E1-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A	10 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.021 ohm	10 A	DUAL	R-PDSO-G8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
UPA1912TE-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.07 ohm	4.5 A	DUAL	R-PDSO-G6			Not Qualified	ESD PROTECTED		e6	10	260	122 pF
HAT2083R	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
UPA1856GR-9JG	Renesas Electronics	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.077 ohm	4.5 A	DUAL	R-PDSO-G8			Not Qualified	ESD PROTECTED		e0
UPA2718GR-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	16.9 mJ	13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0145 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified				10	260
UPA1763G	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	60 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.066 ohm	4.5 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA1701	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.04 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
UPA1840GR-9JG-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2.2 A
UPA2790GR-E1-AT	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				6 A									NOT SPECIFIED	NOT SPECIFIED
UPA2781GR-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0172 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified			e6	10	260
UPA2711GR	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	16.9 mJ	13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.02 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified
UPA2755GR-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A	6.4 mJ	8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	MATTE TIN	.029 ohm	8 A	DUAL	R-PDSO-G8						e3		260
UPA2717GR	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	22.5 mJ	15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0104 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified
UPA2753GR-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W										8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		8 A								e6
UPA2756GR-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
HAT2022R	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.025 ohm	11 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA
UPA2717GR-E2-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			15 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		15 A								e6
UPA1755G	Renesas Electronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.045 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified
UPA1717G-A	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.059 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified				10	260
UPA1764G(0)-E1-A	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
UPA1792G-E2-A	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										6.8 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		6.8 A								e6
UPA2794GR(0)-E1-AY	Renesas Electronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	22 A	3.03 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.033 ohm	5.5 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED	136 pF
UPA1902TE-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
HAT1097R-EL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.13 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED
UPA1830GR-9JG	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.028 ohm	9 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA1710	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	5 A	DUAL	R-PDSO-G8			Not Qualified
UPA2716GR-E1-A	Renesas Electronics	P-CHANNEL	SINGLE	YES	2 W							1			14 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		14 A								e6
UPA2794GR(0)-E1-AZ	Renesas Electronics	N-CHANNEL AND P-CHANNEL		YES	2 W										5.5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				5.5 A									NOT SPECIFIED	NOT SPECIFIED
UPA2754GR-E2-AT	Renesas Electronics	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				11 A
UPA1807GR-9JG-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				12 A
UPA1912TE-T1-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18 A		4.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	4.5 A	DUAL	R-PDSO-G6							NOT SPECIFIED	NOT SPECIFIED	122 pF
UPA1902TE-T1	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				7 A
UPA1808GR-9JG-E2-A	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				9.5 A
UPA2706GR	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	12.1 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Tin/Lead (Sn/Pb)	.029 ohm	11 A	DUAL	R-PDSO-G8			Not Qualified			e0
UPA2752GR-E2-A	Renesas Electronics	N-CHANNEL		YES	2 W										8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		TIN BISMUTH		8 A								e6		260
UPA1727G-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A									NOT SPECIFIED	NOT SPECIFIED
2SK3115-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	24 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.2 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		10	260
2SK1584-T2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.5 A
2SK1587-T1	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK1483-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	4 A		2 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.8 ohm	2 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified			e6	10	260
2SK1588-T2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SK1483-T2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK1588-T2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				3 A
2SK3108	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	51 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.4 ohm	8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e0
2SK2053-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.