2 W Power Field Effect Transistors (FET) 1,092

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

UPA1708G-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

7 A

e6

260

UPA2719GR-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

10 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0255 ohm

10 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

UPA1802GR-9JG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

28 A

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.032 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

UPA1792G(0)-E1-AY

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

5.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.8 A

NOT SPECIFIED

NOT SPECIFIED

UPA1840GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

2.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2.2 A

e6

UPA1764G(0)-E2-AZ

Renesas Electronics

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

UPA1721G-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.017 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA1871GR-9JG

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

80 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.038 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

e0

HAT1044M-EL-E

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

4.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.105 ohm

4.5 A

DUAL

R-PDSO-G6

1

Not Qualified

20

260

HAT3004R

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

44 A

5.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

5.5 A

DUAL

R-PDSO-G8

Not Qualified

MS-012AA

UPA2755GR-E2-A

Renesas Electronics

N-CHANNEL

YES

2 W

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA2752GR-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

32 A

6.4 mJ

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.041 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e6

10

260

UPA1873GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

UPA2756GR-E1

Renesas Electronics

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

UPA1750G-E2-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA1724G-E2-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

UPA1807GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

e6

UPA1807GR-9JG-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

UPA2701GR-E1-AT

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

2SJ462

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5 A

2.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.19 ohm

2.5 A

SINGLE

R-PSSO-F3

DRAIN

Not Qualified

e0

UPA2718GR-E2-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

13 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

13 A

e6

UPA2793GR(0)-E1-AY

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

e3

UPA1817GR-9JG-E1-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

12 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

e6

UPA1871GR-9JG-E2-A

Renesas Electronics

N-CHANNEL

YES

2 W

ENHANCEMENT MODE

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

UPA1724G

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.015 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA2719GR-E2-A

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

10 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0255 ohm

10 A

DUAL

R-PDSO-G8

e6

UPA1800GR-9JG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

UPA1790G

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4 A

.02 mJ

1 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.34 ohm

1 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA1852GR-9JG

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

24 A

6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

HAF2015RJ

Renesas Electronics

N-CHANNEL

YES

2 W

2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

2 A

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA1700G

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

2SJ213-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

5 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

2SJ205-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA1764G

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

28 A

98 mJ

7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.046 ohm

7 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA1871GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

2SJ212-T1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3 ohm

.5 A

SINGLE

R-PSSO-F3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

UPA1724G-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

10 A

e6

UPA2792AGR-E2-AT

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

40 A

10 mJ

10 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.021 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK680A-T2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

UPA1807GR-9JG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

48 A

12 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.016 ohm

12 A

DUAL

R-PDSO-G8

Not Qualified

e0

UPA1930TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA1807GR-9JG-E2-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

12 A

e6

UPA1705G

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

50 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

UPA2701GR-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

14 A

e6

UPA1792G-E2-AT

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

6.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.8 A

NOT SPECIFIED

NOT SPECIFIED

UPA1710AG

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.07 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

UPA1874BGR-9JG-E1-A

Renesas Electronics

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

80 A

8 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0195 ohm

8 A

DUAL

R-PDSO-G8

Not Qualified

e6

UPA2782GR

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.029 ohm

11 A

DUAL

R-PDSO-G8

Not Qualified

e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.