2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDS8958A_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	54 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G8			Not Qualified			e3
FDS8958A_NF073	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A	54 mJ	7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
ZXMN6A11GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15.6 A		4.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.12 ohm	4.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	17.1 pF	MIL-STD-202
IRF8910TRPBF	Infineon Technologies	N-CHANNEL		YES	2 W			20 V			ENHANCEMENT MODE				10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.0134 ohm	10 A			1						30	260
FDS9934C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
NDS9948_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	15 mJ	2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.25 ohm	2.3 A	DUAL	R-PDSO-G8			Not Qualified			e3
ZVN2110G	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4 ohm	.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3		260
FDS6975	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.032 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
IRF7342TRPBF-EL	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	27 A	114 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	37 ns	-55 Cel	96 ns		.105 ohm	3.4 A	DUAL	R-PDSO-G8				ULTRA LOW ON RESISTANCE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED	86 pF
IRF9910TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	83 A	33 mJ	12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0134 ohm	10 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
IRF7343QPBF	International Rectifier	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A	72 mJ	4.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4.7 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3	30	260
SH8KC6TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A	3.5 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.046 ohm	6.5 A	DUAL	R-PDSO-G8	1						10	260	17 pF
IRF7904TRPBF	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	89 A	250 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	10.8 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF9362TRPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	64 A	94 mJ	8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.021 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
STS5DNF60L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.055 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3	30	260
FDFS2P106A_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.11 ohm	3 A	DUAL	R-PDSO-G8			Not Qualified			e3
ZVN4525GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.44 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	8.5 ohm	.31 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	3.6 pF
IRF7313TRPBF-1	Infineon Technologies	N-CHANNEL		YES	2 W			30 V				2			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.029 ohm	6.5 A			1				MS-012AA
NTMD4N03R2G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	80 mJ	4 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.06 ohm	4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF8910TRPBF-1	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	82 A	19 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.3 W	150 Cel	SILICON		-55 Cel			.0134 ohm	10 A	DUAL	R-PDSO-G8	1				MS-012AA				160 pF
FQT5P10	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	55 mJ	1 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	180 ns	-55 Cel	105 ns		1.05 ohm	1 A	DUAL	R-PDSO-G4		DRAIN							25 pF
IRF7341PBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A	72 mJ	4.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.05 ohm	4.7 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
ZXMP10A17GQTA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.4 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.35 ohm	1.7 A	DUAL	R-PDSO-G4		DRAIN				e3		260	29.8 pF	AEC-Q101; MIL-STD-202
SI3445DV	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.042 ohm	5.6 A	DUAL	R-PDSO-G6			Not Qualified			e0
AO4822A	Alpha & Omega Semiconductor	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8 A
IRFTS9342TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A		5.8 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.04 ohm	5.8 A	DUAL	R-PDSO-G6	1
ZXMN10A11GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.9 A		2.4 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.35 ohm	2.4 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260	11 pF	MIL-STD-202
IRF9910TRPBF-1	Infineon Technologies	N-CHANNEL		YES	2 W										12 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							12 A			1
PMV213SN	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.6 A		1.4 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Tin (Sn)	.25 ohm	1.9 A	DUAL	R-PDSO-G3	1		Not Qualified		TO-236AB	e3	30	260	22 pF	IEC-60134
STS4DNF60	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A		4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.09 ohm	4 A	DUAL	R-PDSO-G8			Not Qualified	LOW THRESHOLD			NOT SPECIFIED	NOT SPECIFIED
FDS6898A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.014 ohm	9.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7316TRPBF-1	Infineon Technologies	P-CHANNEL		YES	2 W										4.9 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							4.9 A			1
IRF7341TR	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	42 A	140 mJ	4.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.05 ohm	5.1 A	DUAL	R-PDSO-G8			Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	MS-012AA	e0
NDS9945	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
AO4822AL	Alpha & Omega Semiconductor	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				8.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8.5 A
IRF7324TRPBF-1	Infineon Technologies	P-CHANNEL		YES	2 W										9 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		9 A			1					e3	30	260
IRF7105QPBF	International Rectifier	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3	30	260
IRF7105TRPBF-1	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.1 ohm	3.5 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
IRF7905TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	71 A	18 mJ	8.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0171 ohm	8.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
ZVP2106G	Diodes Incorporated	P-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A		.45 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	5 ohm	.45 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDS6982S	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		8.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.028 ohm	6.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
IRF7350TRPBF	International Rectifier	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	8.4 A	35 mJ	2.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.21 ohm	2.1 A	DUAL	R-PDSO-G8	1			HIGH RELIABILITY	MS-012AA	e3	30	260
SP8K5FU6TB	ROHM	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A			1						10	260
FDS6898AZ-F085	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.014 ohm	9.4 A	DUAL	R-PDSO-G8	1		Not Qualified				30	260
FDS6898AZ_F085	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.014 ohm	9.4 A	DUAL	R-PDSO-G8	1		Not Qualified			e4	30	260
FDS9934C_NL	Fairchild Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.03 ohm	6.5 A	DUAL	R-PDSO-G8			Not Qualified			e3
IRF5801TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4.8 A	9.9 mJ	.6 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.2 ohm	.6 A	DUAL	R-PDSO-G6	1		Not Qualified		MO-193AA	e3	30	260
IRF7341IPBF	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A	72 mJ	4.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.05 ohm	4.7 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE, FAST SWITCHING		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.