2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
ZVN4206GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		1 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	1 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3	30	260
FDS6892A	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.018 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
BSL307SPL6327	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	44 mJ	5.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.043 ohm	5.5 A	DUAL	R-PDSO-G6	1		Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED		e3		260
NDS9945_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.1 ohm	3.5 A	DUAL	R-PDSO-G8			Not Qualified			e3
IRFM210BTF	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			.77 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		.77 A								e0
DMN2009LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	42 A		12 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.008 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3		260
AO4838	Alpha & Omega Semiconductor	N-CHANNEL		YES	2 W			30 V			ENHANCEMENT MODE				11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						.0096 ohm	11 A
AUIRF9952QTR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	16 A	44 mJ	3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.1 ohm	2.8 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY	MS-012AA
FDS6986AS	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		7.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.029 ohm	6.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
STS2DNF30L	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	9 A		3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.15 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified			e4
FDFS2P103A	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.059 ohm	5.3 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
FDS6912	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.028 ohm	6 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
SI4542DY-T1-E3	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A		6.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.025 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
AO4600C	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON		-55 Cel			.023 ohm	7.5 A	DUAL	R-PDSO-G8									65 pF
IRF7907PBF-1	Infineon Technologies	N-CHANNEL		YES	2 W										11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							11 A			1
IRF9953PBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A	57 mJ	2.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.25 ohm	2.3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA
SI3445DV-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.042 ohm	5.6 A	DUAL	R-PDSO-G6	1		Not Qualified			e3
SI3445DV-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.042 ohm	5.6 A	DUAL	R-PDSO-G6	1		Not Qualified			e3	30	260
SI3445DV-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY		8 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	.042 ohm	5.6 A	DUAL	R-PDSO-G6	1		Not Qualified
SP8K2FU6TB	ROHM	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6 A			1						10	260
ZVN2120GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2 A		.32 A	4	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	10 ohm	.32 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
BSL307SP	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	44 mJ	5.5 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.043 ohm	5.5 A	DUAL	R-PDSO-G6	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
FDS6898AZ	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.014 ohm	9.4 A	DUAL	R-PDSO-G8	1		Not Qualified	ESD PROTECTED		e3	30	260
FDZ1323NZ	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING		BALL	RECTANGULAR	ENHANCEMENT MODE	2				6	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER			BOTTOM	R-PBGA-B6	1					e1	30	260	380 pF
IRF7103IPBF	International Rectifier	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	10 A		3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.13 ohm	3 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA-LOW RESISTANCE, FAST SWITCHING		e3	30	260
IRF7304QPBF	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	17 A		4.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
IRF7901D1	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.038 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e0
IRF7901D1GPBF	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.038 ohm	6.2 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF7901D1PBF	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.038 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7901D1TR	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.038 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e0
IRF7901D1TRPBF	International Rectifier	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.038 ohm	6.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF8915TRPBF	Infineon Technologies	N-CHANNEL		YES	2 W										8.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							8.9 A			1
SP8K32HZGTB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.077 ohm	4.5 A	DUAL	R-PDSO-G8						e3			55 pF	AEC-Q101
AO4612	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	11.5 ns	-55 Cel	28 ns		.056 ohm	4.5 A	DUAL	R-PDSO-G8									25 pF
AO4614B	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON		-55 Cel			.03 ohm	6 A	DUAL	R-PDSO-G8									43 pF
AO4614BL	Alpha & Omega Semiconductor	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	40 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON		-55 Cel			.03 ohm	6 A	DUAL	R-PDSO-G8									43 pF
AUIRF7304QTR	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	17 A		4.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE	MS-012AA	e3	40	260
FDS4953	Onsemi	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.055 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
FDS8962C	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.03 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified			e3		260
IRF7101TRPBF	Infineon Technologies	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRLTS6342TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		8.3 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0175 ohm	8.3 A	DUAL	R-PDSO-G6	1
UD4606G-S08-R	Unisonic Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.028 ohm	6.9 A	DUAL	R-PDSO-G8							NOT SPECIFIED	NOT SPECIFIED
VQ1001P-E3	Vishay Intertechnology	N-CHANNEL		NO	2 W						ENHANCEMENT MODE				.83 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel							.83 A
FDS6975_NL	Fairchild Semiconductor	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.032 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified	LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
IRF7307QTRPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	21 A		5.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.05 ohm	5.2 A	DUAL	R-PDSO-G8				AVALANCHE RATED, ULTRA-LOW RESISTANCE	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
RSS050P03FU6TB	ROHM	P-CHANNEL	SINGLE	YES	2 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A			1						10	260
SH8J62TB1	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.056 ohm	4.5 A	DUAL	R-PDSO-G8						e3
SI9801DY	Vishay Intertechnology	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		4.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Tin/Lead (Sn/Pb)	.055 ohm	4.5 A	DUAL	R-PDSO-G8						e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.