Infineon Technologies - BSL307SP

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BSL307SP by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSL307SP
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 22 A;
Datasheet BSL307SP Datasheet
In Stock564
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .043 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 44 mJ
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 5.5 A
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