2 W Power Field Effect Transistors (FET) 1,092

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
ZXMN4A06GQTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY	e3	30	260	60 pF	AEC-Q101; MIL-STD-202
ZXMN4A06GQTC	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A			4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.05 ohm	5 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY	e3	30	260	60 pF	AEC-Q101; MIL-STD-202
FDS6898A_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	38 A		9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.014 ohm	9.4 A	DUAL	R-PDSO-G8			Not Qualified		e3
ZVN2106G	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A		.7 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	2 ohm	.71 A	DUAL	R-PDSO-G4		DRAIN	Not Qualified		e3	40	260
NDS9952A	Onsemi	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	15 A		3.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.08 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
SP8M3HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.082 ohm	5 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED	50 pF	AEC-Q101
RSH070P05TB1	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.039 ohm	7 A	DUAL	R-PDSO-G8				ESD PROTECTED		NOT SPECIFIED	NOT SPECIFIED
STS7C4F30L	STMicroelectronics	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.026 ohm	7 A	DUAL	R-PDSO-G8	1		Not Qualified		e4
SP8M41HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A		3.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN COPPER	.16 ohm	3.4 A	DUAL	R-PDSO-G8	1				e2	10	260	40 pF	AEC-Q101
RRH100P03GZETB	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	.8 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0126 ohm	10 A	DUAL	R-PDSO-G8								450 pF
RSS065N06HZGTB	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A		6.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.048 ohm	6.5 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED	100 pF	AEC-Q101
RS3G160ATTB1	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A	18 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN COPPER	.0076 ohm	16 A	DUAL	R-PDSO-G8	1				e2	10	260	540 pF
RSS070P05HZGTB	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.039 ohm	7 A	DUAL	R-PDSO-G8					e3			330 pF	AEC-Q101
RSS095N05HZGTB	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A		9.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.021 ohm	9.5 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED	210 pF	AEC-Q101
SH8K32GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.077 ohm	4.5 A	DUAL	R-PDSO-G8					e3
SH8KE6TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A	1.6 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.084 ohm	4.5 A	DUAL	R-PDSO-G8								6 pF
SSM6K411TU(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
R6000ENHTB1	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A	2.2 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON					8.8 ohm	.5 A	DUAL	R-PDSO-G8								5 pF
RF4L070BGTCR	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	28 A	4 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.04 ohm	7 A	DUAL	S-PDSO-N6		DRAIN						17 pF
RSS095N05FRATB	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A		9.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.021 ohm	9.5 A	DUAL	R-PDSO-G8	1				e2	10	260	210 pF	AEC-Q101
RXH125N03TB1	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A		12.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.014 ohm	12.5 A	DUAL	R-PDSO-G8					e3
SH8K26GZ0TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	1.08 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.05 ohm	6 A	DUAL	R-PDSO-G8								30 pF
SH8K41GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.16 ohm	3.4 A	DUAL	R-PDSO-G8					e3
SH8K52GZETB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	12 A	6.5 mJ	3 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.19 ohm	3 A	DUAL	R-PDSO-G8					e3
SH8M41GZETB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A		3.4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.16 ohm	3.4 A	DUAL	R-PDSO-G8					e3
SH8M41TB1	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	13.6 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.16 ohm	3.4 A	DUAL	R-PDSO-G8	1					10	260	40 pF
SI9955DY	Vishay Intertechnology	N-CHANNEL		YES	2 W						ENHANCEMENT MODE				3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		3 A							e0
SP8K1FRATB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	20 A		5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN COPPER	.082 ohm	5 A	DUAL	R-PDSO-G8	1				e2	10	260	50 pF	AEC-Q101
SP8K24HZGTB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.037 ohm	6 A	DUAL	R-PDSO-G8					e3			175 pF	AEC-Q101
SP8K2TB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.047 ohm	6 A	DUAL	R-PDSO-G8			Not Qualified		e2
SP8K3FRATB	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	28 A		7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.035 ohm	7 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED	120 pF	AEC-Q101
SP8K5	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	14 A		3.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.15 ohm	3.5 A	DUAL	R-PDSO-G8	1		Not Qualified		e2	10	260
SP8K80TB1	ROHM	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	2 A	.017 mJ	.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					11.7 ohm	.5 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED
SP8M24HZGTB	ROHM	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	45 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18 A		4.5 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.064 ohm	4.5 A	DUAL	R-PDSO-G8						NOT SPECIFIED	NOT SPECIFIED	70 pF	AEC-Q101
DMN2009USS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		12.1 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.008 ohm	12.1 A	DUAL	R-PDSO-G8	3				e3	30	260
DMT3006LFVQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	90 A	29 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.007 ohm	60 A	DUAL	S-PDSO-F8	1	DRAIN			e3		260	72 pF	AEC-Q101; MIL-STD-202
IRFTS8342TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		8.2 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.019 ohm	8.2 A	DUAL	R-PDSO-G6	1				e3	30	260
SI4447DY-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	13 mJ	3.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.054 ohm	3.3 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
SI4447DY-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	13 mJ	3.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.054 ohm	3.3 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260
XP161A1355PR-G	Torex Semiconductor	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		4 A			1				e3	10	260
TPIC5201KC	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	SINGLE	R-PSFM-T7			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TPIC2301KV	Texas Instruments	N-CHANNEL	COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	3	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	ZIG-ZAG	R-PZFM-T7		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TPIC2202KC	Texas Instruments	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	5	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	7.5 A	SINGLE	R-PSFM-T5		SOURCE	Not Qualified			NOT SPECIFIED	NOT SPECIFIED
TPIC5201KV	Texas Instruments	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	NO	2 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	2	15 A	120 mJ	7.5 A	7	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.125 ohm	.75 A	ZIG-ZAG	R-PZFM-T7			Not Qualified			NOT SPECIFIED	NOT SPECIFIED
FSS206	Onsemi	N-CHANNEL	SINGLE	YES	2 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									9 A
FQS4901	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1.8 A		.45 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2 W	150 Cel	SILICON	70 ns	-55 Cel	130 ns		4.2 ohm	.45 A	DUAL	R-PDSO-G8								6.5 pF
FP403	Onsemi	N-CHANNEL		YES	2 W						ENHANCEMENT MODE							FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR
FQS4903TF	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	1.48 A		.37 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6.2 ohm	.37 A	DUAL	R-PDSO-G8	1		Not Qualified		e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.