Image shown is a representation only.
| Manufacturer | ROHM |
|---|---|
| Manufacturer's Part Number | RS3G160ATTB1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | RS3G160ATTB1 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 16 A |
| Maximum Pulsed Drain Current (IDM): | 64 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN COPPER |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .0076 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 18 mJ |
| Maximum Feedback Capacitance (Crss): | 540 pF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e2 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
