Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
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Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.1 W |
ENHANCEMENT MODE |
1 |
5.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
5.5 A |
e0 |
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|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
109.4 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0092 ohm |
12 A |
DUAL |
R-PDSO-G8 |
e3 |
260 |
13 pF |
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|
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
10 A |
260 |
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|
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
6.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
6.9 A |
260 |
|||||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
10 A |
e0 |
|||||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
10 A |
e0 |
|||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
31 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.007 ohm |
14.1 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
72 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
6.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
6.9 A |
260 |
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|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.1 W |
ENHANCEMENT MODE |
1 |
5.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
5.5 A |
260 |
|||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
72 mJ |
9.2 A |
4 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
.016 ohm |
7.1 A |
DUAL |
R-PDSO-N4 |
1 |
DRAIN |
HIGH RELIABILITY |
e4 |
30 |
260 |
AEC-Q101 |
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|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
2.1 W |
ENHANCEMENT MODE |
1 |
5.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
5.5 A |
260 |
|||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
19 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.034 ohm |
6.5 A |
DUAL |
R-PDSO-G8 |
e3 |
260 |
59 pF |
AEC-Q101; IATF 16949 |
|||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
6.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
6.9 A |
e0 |
|||||||||||||||||||||||||||||||||||||||
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
6.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Lead (Sn/Pb) |
6.9 A |
e0 |
|||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
70 A |
3.2 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.01 ohm |
10.4 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
53 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
YES |
2.1 W |
ENHANCEMENT MODE |
10 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
10 A |
260 |
|||||||||||||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
31 mJ |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.007 ohm |
14.1 A |
DUAL |
S-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
72 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
58.3 A |
56.8 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.013 ohm |
10.3 A |
DUAL |
S-PDSO-N5 |
1 |
DRAIN |
e3 |
260 |
132 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
85 A |
39.4 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.011 ohm |
10.6 A |
DUAL |
R-PDSO-G8 |
e3 |
260 |
38 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
35 A |
65 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.05 ohm |
5.3 A |
DUAL |
R-PDSO-G8 |
e3 |
260 |
24 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
30 |
260 |
248 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
30 |
260 |
248 pF |
MIL-STD-202 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
30 |
260 |
248 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
76 A |
30.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.042 ohm |
19.9 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
74 pF |
AEC-Q101; IATF 16949 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
76 A |
30.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.042 ohm |
19.9 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
74 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
58 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.013 ohm |
10.3 A |
DUAL |
S-PDSO-N8 |
1 |
DRAIN |
e3 |
260 |
235 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
37 A |
7.6 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.025 ohm |
5.8 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
LOW THRESHOLD |
e3 |
260 |
|||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
23 A |
4.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.055 ohm |
3.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
76 A |
30.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.042 ohm |
19.9 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
74 pF |
||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
87 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.007 ohm |
14 A |
DUAL |
R-PDSO-G8 |
3 |
e3 |
30 |
260 |
305 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
NO LEAD |
SQUARE |
ENHANCEMENT MODE |
1 |
80 A |
55 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0055 ohm |
16 A |
DUAL |
S-PDSO-N8 |
DRAIN |
e3 |
30 |
260 |
248 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
|||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
76 A |
30.8 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.042 ohm |
19.9 A |
DUAL |
S-PDSO-F8 |
DRAIN |
e3 |
260 |
74 pF |
AEC-Q101; IATF 16949 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
242 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.015 ohm |
8.5 A |
DUAL |
R-PDSO-F8 |
1 |
DRAIN |
e3 |
526 pF |
AEC-Q101; IATF 16949; MIL-STD-202 |
||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
67 mJ |
2.8 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.14 ohm |
2.8 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
TO-261AA |
|||||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
51 mJ |
.64 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2 ohm |
.64 A |
DUAL |
R-PDSO-G4 |
DRAIN |
Not Qualified |
TO-261AA |
||||||||||||||||||||||||
Samsung |
N-CHANNEL |
SINGLE |
YES |
2.1 W |
ENHANCEMENT MODE |
1 |
2.8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
2.8 A |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.