Diodes Incorporated - AF6930NSL

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AF6930NSL by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number AF6930NSL
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 5.5 A;
Datasheet AF6930NSL Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.1 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5.5 A
Maximum Drain Current (Abs) (ID): 5.5 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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