Diodes Incorporated - AF4920NS

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AF4920NS by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number AF4920NS
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 6.9 A;
Datasheet AF4920NS Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2.1 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 6.9 A
Maximum Drain Current (Abs) (ID): 6.9 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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