2.5 W Power Field Effect Transistors (FET) 572

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7853TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A		8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel		MATTE TIN	.018 ohm	8.3 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
FDS2572_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			4.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.053 ohm	4.9 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3
FDS8896	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	196 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	68 ns	-55 Cel	126 ns	MATTE TIN	.006 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	300 pF
IRF8788TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			24 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							24 A			1
DMP3056LSD-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
IRF8736TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	126 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel			.0048 ohm	18 A	DUAL	R-PDSO-G8	1				MS-012AA
DMP2022LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35 A		10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.013 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
FDS6690AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	40 ns	-55 Cel	43 ns	MATTE TIN	.012 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260	100 pF
IRF7413TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		13 A			1					e3	30	260
FDS3992	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		167 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.062 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF9335TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A	98 mJ	5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.059 ohm	5.4 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	40	260
TPW4R50ANH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	400 A	125 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0045 ohm	92 A	DUAL	S-PDSO-F5		DRAIN							63 pF
STS7NF60L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	350 mJ	7.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0215 ohm	7.5 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3		260
IRF7493TR	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			9.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		9.3 A			1					e0
IRF8721TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	68 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	14 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
DMP3056LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		7.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.036 ohm	7.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
FDS6670A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1 W	150 Cel	SILICON	43 ns	-55 Cel	88 ns	MATTE TIN	.008 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260	200 pF
ZVP4424G	Diodes Incorporated	P-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1 A		.48 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	11 ohm	.48 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDS6690A-NBNP006	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	96 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0125 ohm	11 A	DUAL	R-PDSO-G8	1					e3	30	260	115 pF
CSD85312Q3E	Texas Instruments	N-CHANNEL	COMPLEX	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	NO LEAD	SQUARE	ENHANCEMENT MODE	2	76 A	72 mJ	12 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON		-55 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		12 A	DUAL	S-PDSO-N4	1	SOURCE		AVALANCHE RATED		e4	NOT SPECIFIED	260	40 pF
IRF9333TRPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	100 mJ	9.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0194 ohm	9.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA
STN2NF10	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	300 mJ	2 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.26 ohm	2 A	DUAL	R-PDSO-G4	1		Not Qualified			e3	30	260
FQT4N25TF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	3.3 A	52 mJ	.83 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.75 ohm	.83 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	260
FDS3572	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		515 mJ	8.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.016 ohm	8.9 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
FDS8896_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		196 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.006 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
IRF7404TRPBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A		7.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	25 W	150 Cel	SILICON	36 ns	-55 Cel	165 ns	Matte Tin (Sn)	.04 ohm	7.7 A	DUAL	R-PDSO-G8	1			LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260	340 pF
DMP3056LSDQ-13	Diodes Incorporated	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.045 ohm	6.9 A	DUAL	R-PDSO-G8				HIGH RELIABILITY		e3		260	92 pF	AEC-Q101
FDS6375_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	39 ns	-55 Cel	289 ns	MATTE TIN	.024 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified			e3			229 pF
IRF7455TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	200 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0075 ohm	15 A	DUAL	R-PDSO-G8	1				MS-012AA
FQT2P25TF	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	2.2 A	120 mJ	.55 A	4	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4 ohm	.55 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified			e3	30	250
NTHS4101PT1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	UNSPECIFIED	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	190 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON				MATTE TIN	.034 ohm	4.8 A	DUAL	R-XDSO-C8	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	260
CPC5602CTR	Littelfuse	N-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	350 V	GULL WING	RECTANGULAR	DEPLETION MODE	1				4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		85 Cel	SILICON				TIN	14 ohm	.005 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	HIGH RELIABILITY		e3	30	260
FDS3992_NL	Fairchild Semiconductor	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2		167 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.062 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified			e3
AUIRF7416QTR	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	370 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.02 ohm	10 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
DMC3021LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	26 A		8.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.021 ohm	8.5 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMG4413LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0075 ohm	10.5 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
DMP3098LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.065 ohm	5.3 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
CSD17571Q2	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	39 A	7.2 mJ	22 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		NICKEL PALLADIUM GOLD	.029 ohm	7.6 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e4	30	260	12 pF
FDMS3604S	Onsemi	N-CHANNEL	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	40 A	40 mJ	40 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0068 ohm	13 A	DUAL	R-PDSO-N6	1	DRAIN SOURCE	Not Qualified			e3	30	260
IRF7854PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	79 A	110 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0134 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified			e3	30	260
IRF7492PBF	International Rectifier	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	130 mJ	3.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.079 ohm	3.7 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7831TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	100 mJ	21 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0036 ohm	21 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
DN2470K4-G	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	700 V	GULL WING	RECTANGULAR	DEPLETION MODE	1	.5 A			2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	75 ns	-55 Cel	90 ns	MATTE TIN	42 ohm	.17 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified		TO-252AA	e3		260	25 pF	TS 16949
IRF7831TR	International Rectifier	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			21 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							21 A
IRF8714TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	65 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.0087 ohm	14 A	DUAL	R-PDSO-G8	1					e3	30	260
IRF8721TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							14 A			1
AUIRF7207QTR	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A	140 mJ	5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.06 ohm	5.4 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	40	260
CPC3708ZTR	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING		GULL WING	RECTANGULAR	DEPLETION MODE	1				4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		110 Cel	SILICON		-40 Cel			14 ohm	.005 A	DUAL	R-PDSO-G4	1	DRAIN		HIGH RELIABILITY			30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.