2.5 W Power Field Effect Transistors (FET) 572

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
IRF8721GTRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	68 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.0085 ohm	14 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF7807APBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A		8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	8.3 A	DUAL	R-PDSO-G8				MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF7455PBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	200 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0075 ohm	15 A	DUAL	R-PDSO-G8	1			MS-012AA
IRF7842PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	50 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.005 ohm	18 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260	310 pF
IRF7807ATRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A		8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	8.3 A	DUAL	R-PDSO-G8				MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF8714GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	65 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0087 ohm	14 A	DUAL	R-PDSO-G8		Not Qualified		MS-012AA		40	260
IRF3717PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	32 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0044 ohm	20 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF7473PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	140 mJ	6.9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.026 ohm	6.9 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF7422D2PBF	Infineon Technologies	P-CHANNEL	SINGLE	YES	2.5 W							1			4.6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					4.6 A								NOT SPECIFIED	NOT SPECIFIED
IRF7401PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A			1
IRF8707GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	53 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0119 ohm	11 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3
IRF8736PBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	144 A	126 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel		.0048 ohm	18 A	DUAL	R-PDSO-G8	1			MS-012AA
IRF7832PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		155 Cel			MATTE TIN		20 A			1				e3	30	260
IRF7807D1PBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			8.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.3 A
BSO201SP	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	59.6 A	248 mJ	14.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.008 ohm	14.9 A	DUAL	R-PDSO-G8	1	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE				235
IRF7455PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	200 mJ	15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0075 ohm	15 A	DUAL	R-PDSO-G8	1	Not Qualified	AVALANCHE RATED	MS-012AA	e3	30	260
AUIRF7805QTR	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.011 ohm	13 A	DUAL	R-PDSO-G8	1	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE	MS-012AA
IRF7424TRPBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	47 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0135 ohm	11 A	DUAL	R-PDSO-G8				MS-012AA				410 pF
IRF9335PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A	98 mJ	5.4 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.059 ohm	5.4 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA
IRF7424GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	47 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0135 ohm	11 A	DUAL	R-PDSO-G8		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA		40	260
IRF7406GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	23 A		6.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.045 ohm	5.8 A	DUAL	R-PDSO-G8	2	Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3
IRF9328PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	120 mJ	12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0119 ohm	12 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA
IRF7469TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	73 A	210 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.017 ohm	9 A	DUAL	R-PDSO-G8	1			MS-012AA				28 pF
BSO201SPH	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	59.6 A	248 mJ	12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN	.008 ohm	9.3 A	DUAL	R-PDSO-G8	3	Not Qualified			e3		260
IRF7821GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	44 mJ	13.6 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		155 Cel	SILICON		MATTE TIN	.0091 ohm	13.6 A	DUAL	R-PDSO-G8	2	Not Qualified		MS-012AA	e3
IRF7463PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	320 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.008 ohm	14 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA
IRF9388PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A	120 mJ	12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0119 ohm	12 A	DUAL	R-PDSO-G8	1			MS-012AA
IRF7413ZPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	32 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.01 ohm	13 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA
IRF7809AVPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.009 ohm	13.3 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF7240PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	43 A		10.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	10.5 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF8252TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					25 A			1
IRF7834PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	25 mJ	19 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0045 ohm	19 A	DUAL	R-PDSO-G8	1	Not Qualified		MS-012AA	e3	30	260
IRF7805QTRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			13 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					13 A
IRF7410PBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A		16 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1				e3	30	260
SI4435DYPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.02 ohm	8 A	DUAL	R-PDSO-G8	1	Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3
IRF7468PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	160 mJ	9.4 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.0155 ohm	9.4 A	DUAL	R-PDSO-G8	1	Not Qualified	AVALANCHE RATED	MS-012AA	e3	30	260
SI4410DYPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	400 mJ	10 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.0135 ohm	10 A	DUAL	R-PDSO-G8	1	Not Qualified	LOGIC LEVEL COMPATIBLE	MS-012AA	e3	30	260
IRF7807TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A		8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	8.3 A	DUAL	R-PDSO-G8	1			MS-012AA
IRF8788PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	190 A	230 mJ	24 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0028 ohm	24 A	DUAL	R-PDSO-G8	1	Not Qualified
IRF7404QPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	27 A		7.7 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.04 ohm	6.7 A	DUAL	R-PDSO-G8	2	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
IRF7220GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	14 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	110 mJ	11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.012 ohm	11 A	DUAL	R-PDSO-G8		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA		40	260
IRF8721PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					14 A			1
IRF7201PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	70 mJ	7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.03 ohm	7.3 A	DUAL	R-PDSO-G8	1	Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
IRF7389PBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	30 A	82 mJ	7.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.029 ohm	7.3 A	DUAL	R-PDSO-G8	1	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	MS-012AA	e3	30	260
IRF8252PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	231 mJ	25 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0027 ohm	25 A	DUAL	R-PDSO-G8	1	Not Qualified
IRF7416PBF-1	Infineon Technologies	P-CHANNEL	SINGLE	YES	2.5 W							1			10 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A			1
IRF7410PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A		16 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1	Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRF7402PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A		6.8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.035 ohm	6.8 A	DUAL	R-PDSO-G8	1	Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.